Inventor · disambiguated record
Kiyoshi Irino
Also filed as: IRINO KIYOSHI
10 granted patents·1 pending application·98 citations·filing 1997–2008
88Inventor score
Top patents by PatentIndex Score
11 records- 0185US6894369B2Semiconductor device having a high-dielectric gate insulation film and fabrication process thereofFUJITSU LTD·Filed 2002·Granted May 17, 2005·37 cites·17 claims
- 0279US7340352B2Inspecting method, inspecting apparatus, and method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2006·Granted Mar 4, 2008·6 cites·18 claims
- 0366US6998303B2Manufacture method for semiconductor device with patterned film of ZrO2 or the likeFUJITSU LTD·Filed 2003·Granted Feb 14, 2006·12 cites·4 claims
- 0463US6984267B2Manufacture system for semiconductor device with thin gate insulating filmFUJITSU LTD·Filed 2002·Granted Jan 10, 2006·8 cites·6 claims
- 0559US6468926B1Manufacture method and system for semiconductor device with thin gate insulating film of oxynitrideFUJITSU LTD·Filed 1999·Granted Oct 22, 2002·22 cites·23 claims
- 0655US6780699B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2003·Granted Aug 24, 2004·5 cites·20 claims
- 0751US7679737B2Method, system and apparatus of inspectionFUJITSU MICROELECTRONICS LTD·Filed 2008·Granted Mar 16, 2010·0 cites·18 claims
- 0846US5990517ASemiconductor memory device containing nitrogen in a gate oxide filmFUJITSU LTD·Filed 1997·Granted Nov 23, 1999·8 cites·5 claims
- 0937US7005393B2Method of fabricating a semiconductor device containing nitrogen in an oxide filmFUJITSU LTD·Filed 2002·Granted Feb 28, 2006·0 cites·3 claims
- 1031US2003003667A1Semiconductor device and method of fabricating the sameFUJITSU LTD·Filed 2002·Application pending·0 cites
- 1129US6979658B2Method of fabricating a semiconductor device containing nitrogen in a gate oxide filmFUJITSU LTD·Filed 1999·Granted Dec 27, 2005·0 cites·1 claims
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