Inventor · disambiguated record
Mahesh K. Sanganeria
Also filed as: SANGANERIA MAHESH · SANGANERIA MAHESH K
15 granted patents·790 citations·filing 1992–2008
95Inventor score
Files withNOVELLUS SYSTEMS INC5UNIV NORTH CAROLINA STATE3LSI LOGIC CORP2MATTSON TECH INC2CONCEPT SYSTEMS DESIGN INC1
Top patents by PatentIndex Score
15 records- 0195US7396759B1Protection of Cu damascene interconnects by formation of a self-aligned buffer layerNOVELLUS SYSTEMS INC·Filed 2004·Granted Jul 8, 2008·105 cites·15 claims
- 0293US5242847ASelective deposition of doped silion-germanium alloy on semiconductor substrateUNIV NORTH CAROLINA STATE·Filed 1992·Granted Sep 7, 1993·159 cites·20 claims
- 0391US8030777B1Protection of Cu damascene interconnects by formation of a self-aligned buffer layerNOVELLUS SYSTEMS INC·Filed 2007·Granted Oct 4, 2011·18 cites·20 claims
- 0489US5968279AMethod of cleaning wafer substratesMATTSON TECH INC·Filed 1997·Granted Oct 19, 1999·108 cites·13 claims
- 0588US7705431B1Method of improving adhesion between two dielectric filmsNOVELLIUS SYSTEMS INC·Filed 2008·Granted Apr 27, 2010·17 cites·20 claims
- 0687US6113984AGas injection system for CVD reactorsCONCEPT SYSTEMS DESIGN INC·Filed 1997·Granted Sep 5, 2000·86 cites·22 claims
- 0787US5653808AGas injection system for CVD reactorsFiled 1996·Granted Aug 5, 1997·89 cites·2 claims
- 0878US5336903ASelective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structuresUNIV NORTH CAROLINA STATE·Filed 1993·Granted Aug 9, 1994·55 cites·12 claims
- 0974US6118100ASusceptor hold-down mechanismMATTSON TECH INC·Filed 1999·Granted Sep 12, 2000·43 cites·18 claims
- 1074US5670425AProcess for making integrated circuit structure comprising local area interconnects formed over semiconductor substrate by selective deposition on seed layer in patterned trenchLSI LOGIC CORP·Filed 1995·Granted Sep 23, 1997·41 cites·17 claims
- 1169US5895261AProcess for making integrated circuit structure comprising local area interconnects formed over semiconductor substrate by selective deposition on seed layer in patterned trenchLSI LOGIC CORP·Filed 1997·Granted Apr 20, 1999·32 cites·7 claims
- 1268US6403501B1Method of controlling FSG deposition rate in an HDP reactorNOVELLUS SYSTEMS INC·Filed 2000·Granted Jun 11, 2002·13 cites·23 claims
- 1365US7622380B1Method of improving adhesion between two dielectric filmsNOVELLUS SYSTEMS INC·Filed 2005·Granted Nov 24, 2009·2 cites·9 claims
- 1458US6972252B1Method of improving adhesion between two dielectric filmsNOVELLUS SYSTEMS INC·Filed 2003·Granted Dec 6, 2005·6 cites·25 claims
- 1547US5439850AMethod for forming a layer of uniform thickness on a semiconductor wafer during rapid thermal processingUNIV NORTH CAROLINA STATE·Filed 1993·Granted Aug 8, 1995·16 cites·4 claims
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