Inventor · disambiguated record
Chih-Yu Ma
Also filed as: MA Chih-Yu
18 granted patents·8 pending applications·23 citations·filing 2016–2025
90Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26
Top patents by PatentIndex Score
26 records- 0198US10991826B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 27, 2021·6 cites·20 claims
- 0296US10720530B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·9 cites·20 claims
- 0394US11522086B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·2 cites·20 claims
- 0486US12446254B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 0585US11545399B2FinFET EPI channels having different heights on a stepped substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 3, 2023·2 cites·20 claims
- 0682US10490661B2Dopant concentration boost in epitaxially formed materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
- 0781US12402393B2FinFET EPI channels having different heights on a stepped substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 0881US11935955B2Semiconductor device and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 0976US2025089346A1Semiconductor devices having merged source/drain features and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1075US10734524B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·1 cites·20 claims
- 1175US2024014321A1Dopant Concentration Boost in Epitaxially Formed MaterialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1274US12165924B2Semiconductor devices having merged source/drain features and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1373US10347764B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 9, 2019·1 cites·20 claims
- 1472US2024379398A1Semiconductor processing tool and method of operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1571US11776851B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 1670US2025324745A1Semiconductor device and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1767US11705371B2Semiconductor devices having merged source/drain features and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 1866US11342228B2Semiconductor device with multi-layered source/drain regions having different dopant concentrations and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 1965US12414363B2Semiconductor device and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 2065US11721760B2Dopant concentration boost in epitaxially formed materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 8, 2023·0 cites·20 claims
- 2161US2023143537A1Semiconductor processing tool and method of operationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2257US10510618B2FinFET EPI channels having different heights on a stepped substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 17, 2019·0 cites·20 claims
- 2352US2025022945A1Semiconductor device having nanostructure transistor and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2452US2024413223A1Semiconductor structure with reduced leakage current and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2549US2025048694A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2641US9721826B1Wafer supporting structure, and device and method for manufacturing semiconductorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·0 cites·20 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →