Inventor · disambiguated record
Hideaki Teranishi
Also filed as: TERANISHI HIDEAKI
8 granted patents·1 pending application·24 citations·filing 2007–2019
79Inventor score
Top patents by PatentIndex Score
9 records- 0189US7476942B2SOI lateral semiconductor device and method of manufacturing the sameFUJI ELEC DEVICE TECH CO LTD·Filed 2007·Granted Jan 13, 2009·20 cites·20 claims
- 0266US11257676B2Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Feb 22, 2022·1 cites·19 claims
- 0364US9431270B2Method for producing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2014·Granted Aug 30, 2016·1 cites·6 claims
- 0461US8809130B2Reverse block-type insulated gate bipolar transistor manufacturing methodFUJI ELECTRIC CO LTD·Filed 2013·Granted Aug 19, 2014·1 cites·8 claims
- 0559US8460975B2Reverse block-type insulated gate bipolar transistor manufacturing methodNAKAZAWA HARUO·Filed 2011·Granted Jun 11, 2013·1 cites·8 claims
- 0650US11062907B2Nitride semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Jul 13, 2021·0 cites·12 claims
- 0746US9450070B2Method for manufacturing a silicon semiconductor substrate including a diffusion layer prior to forming a semiconductor device thereonFUJI ELECTRIC CO LTD·Filed 2014·Granted Sep 20, 2016·0 cites·22 claims
- 0840US10115587B2Method of manufacturing semiconductor deviceNAKAZAWA HARUO·Filed 2012·Granted Oct 30, 2018·0 cites·8 claims
- 0935US2018308937A1Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →