Inventor · disambiguated record
Hei Seung Kim
Also filed as: KIM HEI-SEUNG
17 granted patents·3 pending applications·31 citations·filing 2011–2024
90Inventor score
Top patents by PatentIndex Score
20 records- 0194US10854612B2Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 1, 2020·10 cites·18 claims
- 0288US11018137B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 25, 2021·4 cites·18 claims
- 0385US10896951B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·4 cites·20 claims
- 0479US8476763B2Semiconductor device conductive pattern structures including dummy conductive patternsKIM HEI-SEUNG·Filed 2011·Granted Jul 2, 2013·5 cites·8 claims
- 0577US12381169B2Semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·13 claims
- 0676US9355851B2Semiconductor devices and methods of manufacturing the sameHONG JONG-WON·Filed 2012·Granted May 31, 2016·3 cites·12 claims
- 0774US8889543B2Method of fabricating semiconductor deviceBAEK JONG-MIN·Filed 2013·Granted Nov 18, 2014·4 cites·20 claims
- 0870US12119336B2Fusion memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 15, 2024·0 cites·20 claims
- 0965US9070752B2Electroplating methods for fabricating integrated circuit devices and devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 30, 2015·1 cites·6 claims
- 1062US11488956B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 1, 2022·0 cites·20 claims
- 1161US11862476B2Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor materialSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 2, 2024·0 cites·16 claims
- 1258US2021257324A1Semiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1355US11462528B2Fusion memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·20 claims
- 1452US9754826B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·8 claims
- 1552US8779547B2Electroplating methods for fabricating integrated circuit devices and devices fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jul 15, 2014·0 cites·12 claims
- 1647US8709937B2Method of forming micropattern, method of forming damascene metallization, and semiconductor device and semiconductor memory device fabricated using the samePARK IN-SUN·Filed 2012·Granted Apr 29, 2014·0 cites·22 claims
- 1747US2014210055A1Method of forming micropattern, method of forming damascene metallization, and semiconductor device and semiconductor memory device fabricated using the samePARK IN-SUN·Filed 2014·Application pending·0 cites
- 1845US9142489B2Semiconductor devices including a non-planar conductive pattern, and methods of forming semiconductor devices including a non-planar conductive patternSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·0 cites·19 claims
- 1939US8592979B2Semiconductor device conductive pattern structures and methods of manufacturing the sameKIM HEI-SEUNG·Filed 2012·Granted Nov 26, 2013·0 cites·14 claims
- 2039US2020150894A1Memory device including a random input and output engine and a storage device including the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
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