Inventor · disambiguated record
Chun-Wai Ng
Also filed as: NG CHUN-WAI
46 granted patents·2 pending applications·136 citations·filing 2010–2020
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26NG CHUN-WAI10TAIWAN SEMICONDUCTOR MFG4LIANG JIAJIN2SU PO-CHIH2
Top patents by PatentIndex Score
48 records- 0196US9293376B2Apparatus and method for power MOS transistorSU PO-CHIH·Filed 2012·Granted Mar 22, 2016·43 cites·17 claims
- 0295US9171931B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 27, 2015·12 cites·21 claims
- 0393US8669611B2Apparatus and method for power MOS transistorNG CHUN-WAI·Filed 2012·Granted Mar 11, 2014·11 cites·15 claims
- 0491US9818845B2MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Nov 14, 2017·8 cites·9 claims
- 0591US9450056B2Lateral DMOS device with dummy gateNG CHUN-WAI·Filed 2012·Granted Sep 20, 2016·11 cites·20 claims
- 0690US9871133B2Lateral DMOS device with dummy gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·5 cites·20 claims
- 0788US8890240B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 18, 2014·5 cites·20 claims
- 0888US8823096B2Vertical power MOSFET and methods for forming the sameSU PO-CHIH·Filed 2012·Granted Sep 2, 2014·7 cites·17 claims
- 0987US10170589B2Vertical power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·3 cites·18 claims
- 1087US9412844B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·3 cites·20 claims
- 1186US9653459B2MOSFET having source region formed in a double wells regionCHOU HSUEH-LIANG·Filed 2012·Granted May 16, 2017·7 cites·18 claims
- 1285US9698227B2FinFET with trench field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 4, 2017·5 cites·20 claims
- 1384US10164085B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 1481US8896060B2Trench power MOSFETNG CHUN-WAI·Filed 2012·Granted Nov 25, 2014·3 cites·19 claims
- 1579US10510880B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·1 cites·20 claims
- 1678US9048255B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 2, 2015·2 cites·20 claims
- 1776US11424244B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 1875US10109732B2Trench power MOSFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·1 cites·20 claims
- 1974US11031495B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 2072US8921934B2FinFET with trench field plateNG CHUN-WAI·Filed 2012·Granted Dec 30, 2014·2 cites·20 claims
- 2168US10840246B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 2267US10686065B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 2367US8933507B2Metal/polysilicon gate trench power mosfetNG CHUN-WAI·Filed 2012·Granted Jan 13, 2015·2 cites·20 claims
- 2465US10727334B2Lateral DMOS device with dummy gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·0 cites·20 claims
- 2564US10304829B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·0 cites·20 claims
- 2664US9647077B2Power semiconductor devices having a semi-insulating field plateHKG TECH LTD·Filed 2014·Granted May 9, 2017·2 cites·15 claims
- 2762US8969955B2Power MOSFET and methods for forming the sameNG CHUN-WAI·Filed 2012·Granted Mar 3, 2015·1 cites·21 claims
- 2861US9825035B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 21, 2017·0 cites·20 claims
- 2960US10453955B2Lateral DMOS device with dummy gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 22, 2019·0 cites·20 claims
- 3059US9905674B2Vertical power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 27, 2018·0 cites·19 claims
- 3159US9673297B2Vertical power MOSFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 6, 2017·0 cites·19 claims
- 3259US9620635B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·0 cites·20 claims
- 3358US10141421B2Vertical power MOSFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·0 cites·20 claims
- 3458US10090390B2FinFET with trench field plateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 2, 2018·0 cites·20 claims
- 3558US10050126B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 3658US9553029B2Integrated circuit having a vertical power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 24, 2017·0 cites·20 claims
- 3758US2020006489A1MOSFET Having Drain Region Formed Between Two Gate Electrodes with Body Contact Region and Source Region Formed in a Double Well RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
- 3856US9130060B2Integrated circuit having a vertical power MOS transistorNG CHUN-WAI·Filed 2012·Granted Sep 8, 2015·0 cites·20 claims
- 3955US9627265B2Apparatus and method for power MOS transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·0 cites·20 claims
- 4054US8884369B2Vertical power MOSFET and methods of forming the sameNG CHUN-WAI·Filed 2012·Granted Nov 11, 2014·0 cites·19 claims
- 4153US9178041B2Power MOSFET and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 3, 2015·0 cites·20 claims
- 4252US2017250252A1MOSFET Having Source Region Formed in a Double Wells RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Application pending·0 cites
- 4350US10593767B2Field plate structure for power semiconductor device and manufacturing method thereofNG CHUN WAI·Filed 2014·Granted Mar 17, 2020·0 cites·15 claims
- 4450US9087920B2Vertical power MOSFET and methods of forming the sameNG CHUN-WAI·Filed 2012·Granted Jul 21, 2015·0 cites·20 claims
- 4548US9892974B2Vertical power MOSFET and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 13, 2018·0 cites·20 claims
- 4642US9397178B2Split gate power semiconductor field effect transistorLIANG JIAJIN·Filed 2014·Granted Jul 19, 2016·0 cites·7 claims
- 4741US9825149B2Split gate power semiconductor field effect transistorLIANG JIAJIN·Filed 2016·Granted Nov 21, 2017·0 cites·11 claims
- 4838US9553185B2MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor deviceSIN KIN-ON·Filed 2010·Granted Jan 24, 2017·0 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →