Inventor · disambiguated record
Jun-Young Jeon
Also filed as: JEON JUN-YOUNG
32 granted patents·1 pending application·757 citations·filing 1989–2009
98Inventor score
Top patents by PatentIndex Score
33 records- 0192USD432096SSemiconductor moduleSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 17, 2000·48 cites·1 claims
- 0290USD432097SSemiconductor packageSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 17, 2000·42 cites·1 claims
- 0387US6768660B2Multi-chip memory devices and modules including independent control of memory chipsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jul 27, 2004·76 cites·19 claims
- 0485US5838189ASubstrate voltage generating circuit of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Nov 17, 1998·42 cites·6 claims
- 0585US5373476AHighly integrated semiconductor memory device with triple well structureSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Dec 13, 1994·59 cites·3 claims
- 0682US5343088ACharge pump circuit for a substrate voltage generator of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Aug 30, 1994·64 cites·12 claims
- 0779US5747974AInternal supply voltage generating circuit for semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 5, 1998·35 cites·10 claims
- 0878US6094382AIntegrated circuit memory devices with improved layout of fuse boxes and busesSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 25, 2000·40 cites·21 claims
- 0976US6026047AIntegrated circuit memory device with hierarchical work line structureSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 15, 2000·39 cites·8 claims
- 1073US5341331AData transmission circuit having common input/output linesSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Aug 23, 1994·35 cites·18 claims
- 1171US6212121B1Semiconductor memory device with multiple sub-arrays of different sizesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 3, 2001·31 cites·8 claims
- 1271US5952871ASubstrate voltage generating circuit of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 14, 1999·28 cites·3 claims
- 1371US5812483AIntegrated circuit memory devices including split word lines and predecoders and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 22, 1998·32 cites·21 claims
- 1471US5278797ASemiconductor memory device capable of executing non-periodic refreshing operationsSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Jan 11, 1994·33 cites·4 claims
- 1564US6069812AIntegrated circuit memory devices including rows of pads extending parallel to the short sides of the integrated circuitSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 30, 2000·22 cites·21 claims
- 1660US5455192AMethod of making dynamic random access memory cell having a stacked capacitor and a trench capacitorSAMSUNG ELECTRONICS CO LTD·Filed 1991·Granted Oct 3, 1995·17 cites·21 claims
- 1759US5027172ADynamic random access memory cell and method of making thereofSAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted Jun 25, 1991·14 cites·11 claims
- 1851US6219297B1Dynamic random access memory that can be controlled by a controller for a less integrated dynamic random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 17, 2001·10 cites·9 claims
- 1950US6573611B1Dual-lead type square semiconductor package and dual in-line memory module using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 3, 2003·4 cites·23 claims
- 2049US5479093AInternal voltage generating circuit of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Dec 26, 1995·12 cites·8 claims
- 2146US5701072AIntegrated circuit output driver systems including multiple power and ground linesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 23, 1997·11 cites·28 claims
- 2245US6303970B1Semiconductor device with a plurality of fusesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 16, 2001·11 cites·7 claims
- 2345US6147924AArrangement of data input/output circuits for use in a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 14, 2000·9 cites·18 claims
- 2439US5748550AMultiple power line arrangement for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 5, 1998·10 cites·10 claims
- 2538US6274931B1Integrated circuit packaging systems and methods that use the same packaging substrates for integrated circuits of different data path widthsSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Aug 14, 2001·7 cites·23 claims
- 2637US7173871B2Semiconductor memory device and method of outputting data strobe signal thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 6, 2007·2 cites·7 claims
- 2737US5930191ASemiconductor memory device having a plurality of power voltagesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 27, 1999·5 cites·15 claims
- 2836US6118722AIntegrated circuit memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 12, 2000·5 cites·33 claims
- 2936US5374839ASemiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Dec 20, 1994·6 cites·18 claims
- 3035US5850363AVoltage boosting circuit having dual precharge circuits in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Dec 15, 1998·4 cites·16 claims
- 3134US5930166ASemiconductor memory device with triple metal layerSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 27, 1999·4 cites·11 claims
- 3232US9236129B2Flash memory integrated circuit with compression/decompression CODECJEON JUN YOUNG·Filed 2009·Granted Jan 12, 2016·0 cites·9 claims
- 3332US2002024834A1Memory module having programmable logic device and sTSOPSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →