Inventor · disambiguated record
Tadashi Hirao
Also filed as: HIRAO TADASHI
18 granted patents·278 citations·filing 1982–1997
95Inventor score
Files withMITSUBISHI ELECTRIC CORP18
Top patents by PatentIndex Score
18 records- 0178US4486942AMethod of manufacturing semiconductor integrated circuit BI-MOS deviceMITSUBISHI ELECTRIC CORP·Filed 1983·Granted Dec 11, 1984·36 cites·6 claims
- 0276US4445268AMethod of manufacturing a semiconductor integrated circuit BI-MOS deviceMITSUBISHI ELECTRIC CORP·Filed 1982·Granted May 1, 1984·34 cites·5 claims
- 0367US4661166AMethod of manufacturing semiconductor device using a Czochralski wafer and multiple heat treatmentMITSUBISHI ELECTRIC CORP·Filed 1984·Granted Apr 28, 1987·28 cites·5 claims
- 0462US4665422ASolid state image sensing deviceMITSUBISHI ELECTRIC CORP·Filed 1984·Granted May 12, 1987·16 cites·6 claims
- 0561US4729969AMethod for forming silicide electrode in semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 8, 1988·19 cites·2 claims
- 0661US4705599AMethod for fabricating bipolar transistor in integrated circuitMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Nov 10, 1987·20 cites·2 claims
- 0759US4665424ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1985·Granted May 12, 1987·16 cites·10 claims
- 0858US4949153ASemiconductor IC device with polysilicon resistorMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Aug 14, 1990·20 cites·15 claims
- 0954US4728618AMethod of making a self-aligned bipolar using differential oxidation and diffusionMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Mar 1, 1988·15 cites·20 claims
- 1051US4812417AMethod of making self aligned external and active base regions in I.C. processingMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Mar 14, 1989·11 cites·20 claims
- 1150US4740482AMethod of manufacturing bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Apr 26, 1988·13 cites·6 claims
- 1247US4651016ASolid-state image sensor provided with a bipolar transistor and an MOS transistorMITSUBISHI ELECTRIC CORP·Filed 1984·Granted Mar 17, 1987·10 cites·8 claims
- 1343US4791070AMethod of fabricating a solid state image sensing deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Dec 13, 1988·9 cites·4 claims
- 1441US4691436AMethod for fabricating a bipolar semiconductor device by undercutting and local oxidationMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Sep 8, 1987·11 cites·10 claims
- 1540US4772567AMethod of producing a semiconductor integrated circuit BI-MOS deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Sep 20, 1988·10 cites·5 claims
- 1634US6087708ASemiconductor integrated circuit device and a method of producing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 11, 2000·3 cites·19 claims
- 1733US4709469AMethod of making a bipolar transistor with polycrystalline contactsMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Dec 1, 1987·3 cites·3 claims
- 1832US4803174ABipolar transistor integrated circuit and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Feb 7, 1989·4 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →