Inventor · disambiguated record
Kazuhiro Ohba
Also filed as: OHBA KAZUHIRO
56 granted patents·13 pending applications·395 citations·filing 2002–2025
98Inventor score
Files withSONY CORP36SONY SEMICONDUCTOR SOLUTIONS CORP16OHBA KAZUHIRO9MIZUGUCHI TETSUYA2YASUDA SHUICHIRO2
Top patents by PatentIndex Score
69 records- 0196US9543512B2Switch device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2015·Granted Jan 10, 2017·17 cites·19 claims
- 0291US10084017B2Switch device and storage unit having a switch layer between first and second electrodesSONY CORP·Filed 2015·Granted Sep 25, 2018·13 cites·28 claims
- 0390US7315053B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Jan 1, 2008·42 cites·6 claims
- 0490US7026671B2Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Apr 11, 2006·51 cites·13 claims
- 0589US7262064B2Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereofSONY CORP·Filed 2002·Granted Aug 28, 2007·49 cites·39 claims
- 0688US8427860B2Memory component, memory device, and method of operating memory deviceOHBA KAZUHIRO·Filed 2011·Granted Apr 23, 2013·10 cites·22 claims
- 0788US7696511B2Memory element and memory deviceSONY CORP·Filed 2008·Granted Apr 13, 2010·13 cites·18 claims
- 0888US6831314B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Dec 14, 2004·45 cites·8 claims
- 0985US6990014B2Magnetoresistive element and magnetic memory unitSONY CORP·Filed 2005·Granted Jan 24, 2006·14 cites·3 claims
- 1082US10403680B2Switch device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Sep 3, 2019·3 cites·17 claims
- 1181US10804321B2Switch device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Oct 13, 2020·2 cites·20 claims
- 1280US11018189B2Storage apparatusSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted May 25, 2021·3 cites·16 claims
- 1380US10529777B2Switch device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Jan 7, 2020·5 cites·17 claims
- 1480US7888755B2Magnetic storage device with intermediate layers having different sheet resistivitiesSONY CORP·Filed 2005·Granted Feb 15, 2011·12 cites·10 claims
- 1580US6999288B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2005·Granted Feb 14, 2006·8 cites·3 claims
- 1679US9058873B2Memory element having ion source layers with different contents of a chalcogen elementSHIMUTA MASAYUKI·Filed 2012·Granted Jun 16, 2015·8 cites·12 claims
- 1777US8699260B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Apr 15, 2014·5 cites·14 claims
- 1874US6879473B2Magnetoresistive device and magnetic memory deviceSONY CORP·Filed 2003·Granted Apr 12, 2005·10 cites·6 claims
- 1974US6879514B2Magnetoresistive element and magnetic memory unitSONY CORP·Filed 2003·Granted Apr 12, 2005·19 cites·6 claims
- 2073US8730709B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2013·Granted May 20, 2014·3 cites·14 claims
- 2172US9466791B2Storage device and storage unitSONY CORP·Filed 2013·Granted Oct 11, 2016·4 cites·12 claims
- 2272US6992868B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2005·Granted Jan 31, 2006·6 cites·3 claims
- 2372US6815745B2Tunnel magnetoresistive effect element, method of manufacturing tunnel magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Nov 9, 2004·12 cites·3 claims
- 2471US9543514B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2015·Granted Jan 10, 2017·2 cites·12 claims
- 2570US11152428B2Selection device and storage apparatusSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2018·Granted Oct 19, 2021·1 cites·4 claims
- 2669US9761796B2Storage device and storage unit with ion source layer and resistance change layerSONY CORP·Filed 2013·Granted Sep 12, 2017·3 cites·17 claims
- 2769US9419214B2Target, method for producing the same, memory, and method for producing the sameSONY CORP·Filed 2014·Granted Aug 16, 2016·0 cites·5 claims
- 2869US7034348B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2003·Granted Apr 25, 2006·16 cites·5 claims
- 2968US11462685B2Switch device, storage apparatus, and memory system incorporating boron and carbonSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Oct 4, 2022·2 cites·12 claims
- 3068US10069066B2Target, method for producing the same, memory, and method for producing the sameSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Sep 4, 2018·0 cites·1 claims
- 3168US9240549B2Memory component, memory device, and method of operating memory deviceSONY CORP·Filed 2014·Granted Jan 19, 2016·2 cites·20 claims
- 3268US8492740B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2008·Granted Jul 23, 2013·6 cites·35 claims
- 3367US9246090B2Storage device and storage unitSONY CORP·Filed 2013·Granted Jan 26, 2016·1 cites·13 claims
- 3466US10418416B2Memory device and memory unitSONY CORP·Filed 2013·Granted Sep 17, 2019·1 cites·17 claims
- 3562US8912516B2Memory element with ion source layer and memory deviceOHBA KAZUHIRO·Filed 2012·Granted Dec 16, 2014·2 cites·14 claims
- 3661US8885385B2Memory element and memory deviceMIZUGUCHI TETSUYA·Filed 2012·Granted Nov 11, 2014·2 cites·14 claims
- 3761US8710482B2Memory component and memory deviceYASUDA SHUICHIRO·Filed 2011·Granted Apr 29, 2014·2 cites·14 claims
- 3861US7700982B2Magnetoresistive effect element and magnetic memory deviceSONY CORP·Filed 2007·Granted Apr 20, 2010·1 cites·4 claims
- 3958US10879312B2Memory device and memory unitSONY CORP·Filed 2019·Granted Dec 29, 2020·0 cites·14 claims
- 4057US2011027597A1Target, method for producing the same, memory, and method for producing the sameSONY CORP·Filed 2010·Application pending·0 cites
- 4155US2025278173A1Display terminal, display method, and non-transitory recording mediumOHBA KAZUHIRO·Filed 2025·Application pending·0 cites
- 4254US8816313B2Memory element and memory deviceOHBA KAZUHIRO·Filed 2009·Granted Aug 26, 2014·0 cites·11 claims
- 4352US2017098684A1Switch device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Application pending·0 cites
- 4452US2022162742A1Sputtering target and method of manufacturing the same, and memory device manufacturing methodSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
- 4552US2017098683A1Switch device and storage unitSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Application pending·0 cites
- 4652US2024179274A1Display terminal, communication system, display method, communication method, and recording mediumOHBA KAZUHIRO·Filed 2023·Application pending·0 cites
- 4752US2024415033A1Storage element and storage deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Application pending·0 cites
- 4848US9231200B2Memory element and memory deviceSONY CORP·Filed 2014·Granted Jan 5, 2016·0 cites·16 claims
- 4947US10991071B2Information processing apparatus and recording mediumOHBA KAZUHIRO·Filed 2019·Granted Apr 27, 2021·0 cites·11 claims
- 5047US9577187B2Memory element with ion conductor layer in which metal ions diffuse and memory device incorporating sameSONY CORP·Filed 2015·Granted Feb 21, 2017·0 cites·14 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →