Inventor · disambiguated record

Chen-Hao Chiang

Also filed as: CHIANG CHEN-HAO

39 granted patents·17 pending applications·95 citations·filing 2009–2025

96Inventor score

Technology areasH10P H10F H10D H10W G06F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD40 TAIWAN SEMICONDUCTOR MFG9 AU OPTRONICS CORP3 AUO CORP1 CHIANG CHEN-HAO1

Top patents by PatentIndex Score

56 records

0192US9368610B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·6 cites·20 claims
0292US8912570B2High electron mobility transistor and method of forming the sameCHIANG CHEN-HAO·Filed 2012·Granted Dec 16, 2014·21 cites·18 claims
0390US11749762B2Semiconductor device comprising a photodetector with reduced dark currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 5, 2023·2 cites·20 claims
0490US9245991B2Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·8 cites·20 claims
0589US9525054B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·8 cites·20 claims
0689US8901609B1Transistor having doped substrate and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·12 cites·20 claims
0786US12328965B2In-situ cap for germanium photodetectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
0886US9939942B2Touch display panelAU OPTRONICS CORP·Filed 2016·Granted Apr 10, 2018·4 cites·24 claims
0986US8969882B1Transistor having an ohmic contact by screen layer and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·6 cites·20 claims
1085US2025366221A1Photodetectors and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1184US11551927B2High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
1283US11984486B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
1383US9236464B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 12, 2016·5 cites·20 claims
1483US9076854B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·4 cites·20 claims
1583US8975641B1Transistor having an ohmic contact by gradient layer and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 10, 2015·6 cites·20 claims
1683US2025280622A1In-situ cap for germanium photodetectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1780US9548376B2Method of manufacturing a semiconductor device including a barrier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 17, 2017·2 cites·20 claims
1879US12369352B2Thin film transfer using substrate with etch stop layer and diffusion barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
1979US9899493B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·2 cites·20 claims
2079US2024379792A1Thin film transfer using substrate with etch stop layer and diffusion barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2178US12308230B2High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
2278US12136679B2Semiconductor device comprising a photodetector with reduced dark currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
2378US2024372018A1Semiconductor device comprising a photodetector with reduced dark currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2477US2024379692A1Image sensor with diffusion barrier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2575US11594606B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
2674US10867792B2High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 15, 2020·2 cites·19 claims
2773US11949030B2In-situ cap for germanium photodetectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·0 cites·20 claims
2873US10921918B2Touch display device and method for driving the sameAU OPTRONICS CORP·Filed 2020·Granted Feb 16, 2021·1 cites·9 claims
2972US9425276B2High electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·2 cites·20 claims
3072US2025273462A1Passive cap for germanium-containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3171US10109729B2High electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·1 cites·20 claims
3270US12439709B2Image sensor with diffusion barrier structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 7, 2025·0 cites·20 claims
3370US11804531B2Thin film transfer using substrate with etch stop layer and diffusion barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 31, 2023·0 cites·20 claims
3469US9478632B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·1 cites·20 claims
3569US2023369526A1Photodetectors and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3665US12327723B2Passive cap for germanium-containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
3765US12074036B2Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
3865US10937878B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 2, 2021·0 cites·20 claims
3965US10937900B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 2, 2021·1 cites·20 claims
4060US2025216589A1Display panelAUO CORP·Filed 2024·Application pending·0 cites
4159US10991819B2High electron mobility transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·0 cites·20 claims
4259US2024372019A1Photo detector and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4358US11171015B2Multi-layered polysilicon and oxygen-doped polysilicon design for RF SOI trap-rich poly layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·20 claims
4458US10164038B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 25, 2018·0 cites·19 claims
4558US9202875B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 1, 2015·0 cites·20 claims
4658US2025234659A1Semiconductor structure including photodetector and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4758US2025228016A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4858US2025241075A1Structure and formation method of semiconductor device with photosensing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4958US2025241086A1Structure and formation method of semiconductor device with photo-sensing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5057US10079296B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 18, 2018·0 cites·20 claims

Showing the top 50 of 56 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →