Inventor · disambiguated record
Sameh G. Khalil
Also filed as: KHALIL SAMEH · KHALIL SAMEH G
13 granted patents·74 citations·filing 2007–2018
90Inventor score
Top patents by PatentIndex Score
13 records- 0193US9601610B1Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gasHRL LAB LLC·Filed 2015·Granted Mar 21, 2017·11 cites·15 claims
- 0292US8680536B2Non-uniform two dimensional electron gas profile in III-Nitride HEMT devicesKHALIL SAMEH G·Filed 2012·Granted Mar 25, 2014·15 cites·15 claims
- 0390US9799726B1Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gasHRL LAB LLC·Filed 2016·Granted Oct 24, 2017·7 cites·14 claims
- 0490US9077335B2Reduction of the inductance of power loop and gate loop in a half-bridge converter with vertical current loopsHRL LAB LLC·Filed 2013·Granted Jul 7, 2015·13 cites·24 claims
- 0588US10192986B1HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameHRL LAB LLC·Filed 2016·Granted Jan 29, 2019·5 cites·7 claims
- 0686US9490357B2Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gasHRL LAB LLC·Filed 2014·Granted Nov 8, 2016·7 cites·12 claims
- 0778US10700201B2HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameHRL LAB LLC·Filed 2018·Granted Jun 30, 2020·2 cites·6 claims
- 0878US8999780B1Non-uniform two-dimensional electron gas profile in III-nitride HEMT devicesHRL LAB LLC·Filed 2014·Granted Apr 7, 2015·3 cites·21 claims
- 0974US8106451B2Multiple lateral RESURF LDMOSTKHALIL SAMEH·Filed 2007·Granted Jan 31, 2012·8 cites·15 claims
- 1071US9379195B2HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the sameKHALIL SAMEH G·Filed 2012·Granted Jun 28, 2016·3 cites·7 claims
- 1156US8933487B2Controlling lateral two-dimensional electron hole gas HEMT in type III nitride devices using ion implantation through gray scale maskHRL LAB LLC·Filed 2013·Granted Jan 13, 2015·0 cites·10 claims
- 1251US10325997B2Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gasHRL LAB LLC·Filed 2016·Granted Jun 18, 2019·0 cites·12 claims
- 1351US9000484B2Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale maskKHALIL SAMEH G·Filed 2012·Granted Apr 7, 2015·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →