Inventor · disambiguated record
Limin Weng
Also filed as: WENG LIMIN
10 granted patents·107 citations·filing 2008–2017
89Inventor score
Top patents by PatentIndex Score
10 records- 0194US8431457B2Method for fabricating a shielded gate trench MOS with improved source pickup layoutCHANG HONG·Filed 2010·Granted Apr 30, 2013·20 cites·23 claims
- 0294US8338854B2TVS with low capacitance and forward voltage drop with depleted SCR as steering diodeBOBDE MADHUR·Filed 2009·Granted Dec 25, 2012·31 cites·22 claims
- 0390US8138605B2Multiple layer barrier metal for device component formed in contact trenchCHANG HONG·Filed 2009·Granted Mar 20, 2012·17 cites·23 claims
- 0490US7863995B2Methods of achieving linear capacitance in symmetrical and asymmetrical EMI filters with TVSALPHA & OMEGA SEMICONDUCTOR·Filed 2008·Granted Jan 4, 2011·20 cites·23 claims
- 0586US8835977B2TVS with low capacitance and forward voltage drop with depleted SCR as steering diodeBOBDE MADHUR·Filed 2012·Granted Sep 16, 2014·8 cites·17 claims
- 0684US8994101B2Shielded gate trench MOS with improved source pickup layoutCHANG HONG·Filed 2013·Granted Mar 31, 2015·5 cites·7 claims
- 0781US8580676B2Multiple layer barrier metal for device component formed in contact trenchCHANG HONG·Filed 2012·Granted Nov 12, 2013·5 cites·17 claims
- 0867US9252265B2Shielded gate trench MOS with improved source pickup layoutALPHA & OMEGA SEMICONDUCTOR·Filed 2015·Granted Feb 2, 2016·1 cites·16 claims
- 0956US9793254B2TVS structures for high surge and low capacitanceBOBDE MADHUR·Filed 2014·Granted Oct 17, 2017·0 cites·15 claims
- 1053US10096588B2TVS structures for high surge and low capacitanceBOBDE MADHUR·Filed 2017·Granted Oct 9, 2018·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →