Inventor · disambiguated record
Po-Chih Chen
Also filed as: CHEN PO-CHIH
51 granted patents·12 pending applications·115 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD40TAIWAN SEMICONDUCTOR MFG7CHEN PO-CHIH3INST INFORMATION IND3WONG KING-YUEN3
Top patents by PatentIndex Score
63 records- 0194US12278272B2Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 15, 2025·2 cites·20 claims
- 0294US11521915B2Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·3 cites·20 claims
- 0393US8624296B1High electron mobility transistor including an embedded flourine regionWONG KING-YUEN·Filed 2012·Granted Jan 7, 2014·18 cites·18 claims
- 0492US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 0591US10535730B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·8 cites·20 claims
- 0691US10269949B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 0791US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 0891US9443969B2Transistor having metal diffusion barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·10 cites·20 claims
- 0990US9812562B1Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
- 1090US8507920B2Semiconductor structure and method of forming the sameCHEN PO-CHIH·Filed 2011·Granted Aug 13, 2013·12 cites·20 claims
- 1188US9165839B2Plasma protection diode for a HEMT deviceWONG KING-YUEN·Filed 2012·Granted Oct 20, 2015·6 cites·20 claims
- 1287US11145713B2High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·4 cites·20 claims
- 1387US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 1485US8697505B2Method of forming a semiconductor structureCHEN PO-CHIH·Filed 2011·Granted Apr 15, 2014·6 cites·20 claims
- 1583US12107156B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·0 cites·20 claims
- 1682US8963162B2High electron mobility transistorHSU CHUN-WEI·Filed 2011·Granted Feb 24, 2015·5 cites·20 claims
- 1778US2024387719A1Barrier structure configured to increase performance of iii-v devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1878US2025267917A1Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1976US12324211B2Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 2076US12094838B2Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 2176US11532740B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 2275US2024355761A1Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2375US2024355711A1Front-end-of-line (feol) through semiconductor-on-substrate via (tsv)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2473US12419074B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 16, 2025·0 cites·20 claims
- 2573US9419093B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 16, 2016·2 cites·20 claims
- 2670US12046537B2Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·0 cites·20 claims
- 2769US2025212484A1Source leakage current suppression by source surrounding gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2868US11664431B2Ring transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 2968US9111956B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 18, 2015·1 cites·20 claims
- 3068US2024234867A1Heat transfer fluid for thermal management, thermal management device and battery thermal management systemIND TECH RES INST·Filed 2023·Application pending·0 cites
- 3167US11798899B2Crack stop ring trench to prevent epitaxy crack propagationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 3267US11715792B2Barrier structure configured to increase performance of III-V devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·20 claims
- 3367US11069805B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 3467US9224829B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 29, 2015·1 cites·20 claims
- 3567US2025218622A1Heat dissipation structure and cooling methodIND TECH RES INST·Filed 2024·Application pending·0 cites
- 3666US10964804B2Semiconductor structure, HEMT structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 3765US11222968B2HEMT device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 3862US9306012B2Strip-ground field plateTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 5, 2016·1 cites·20 claims
- 3961US10522671B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·0 cites·20 claims
- 4060US8456371B2Shielding antennas in wireless application devicesCHEN JIA-WOEI·Filed 2012·Granted Jun 4, 2013·2 cites·20 claims
- 4158US9871030B2Plasma protection diode for a HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·0 cites·20 claims
- 4258US9570598B2Method of forming a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 14, 2017·0 cites·20 claims
- 4358US9263565B2Method of forming a semiconductor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 16, 2016·0 cites·20 claims
- 4457US9793371B2Method of forming a high electron mobility transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 4557US9755045B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·20 claims
- 4656US10510882B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 4756US9502311B2Plasma protection diode for a HEMT deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·0 cites·20 claims
- 4856US8946012B2Method of forming a semiconductor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 3, 2015·0 cites·20 claims
- 4955US10062776B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 28, 2018·0 cites·20 claims
- 5055US9412835B2Rectifier structures with low leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·0 cites·20 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →