Inventor · disambiguated record
Masatoshi Onoue
Also filed as: ONOUE MASATOSHI
2 granted patents·1 pending application·2 citations·filing 2012–2014
39Inventor score
Files withJAPAN SCIENCE & TECH AGENCY3
Top patents by PatentIndex Score
3 records- 0160US9876067B2Dielectric layer and manufacturing method of dielectric layer, and solid-state electronic device and manufacturing method of solid-state electronic deviceJAPAN SCIENCE & TECH AGENCY·Filed 2014·Granted Jan 23, 2018·1 cites·25 claims
- 0260US9293257B2Solid-state electronic device including dielectric bismuth niobate film formed from solutionJAPAN SCIENCE & TECH AGENCY·Filed 2012·Granted Mar 22, 2016·1 cites·11 claims
- 0341US2016016813A1Oxide layer and production method for oxide layer, as well as capacitor, semiconductor device, and microelectromechanical system provided with oxide layerJAPAN SCIENCE & TECH AGENCY·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →