Inventor · disambiguated record
Mark A. Helm
Also filed as: HELM MARK · HELM MARK A · HELM MARK ALAN
123 granted patents·9 pending applications·1,012 citations·filing 1994–2025
99Inventor score
Files withMICRON TECHNOLOGY INC103INTEL CORP5GODA AKIRA3GOLDMAN MATTHEW3LODESTAR LICENSING GROUP LLC3
Top patents by PatentIndex Score
132 records- 0199US7755146B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesROUND ROCK RES LLC·Filed 2009·Granted Jul 13, 2010·123 cites·20 claims
- 0297US11289166B2Acceleration of data queries in memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·4 cites·27 claims
- 0396US5624863ASemiconductor processing method of forming complementary N-type doped and P-type doped active regions within a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1995·Granted Apr 29, 1997·146 cites·26 claims
- 0495US11288160B2Threshold voltage distribution adjustment for bufferMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 0595US5534449AMethods of forming complementary metal oxide semiconductor (CMOS) integrated circuitryMICRON TECHNOLOGY INC·Filed 1995·Granted Jul 9, 1996·100 cites·30 claims
- 0694US11829245B2Multi-layer code rate architecture for copyback between partitions with different code ratesMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 28, 2023·3 cites·33 claims
- 0794US11823742B2Acceleration of data queries in memoryMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 21, 2023·2 cites·19 claims
- 0894US9947418B2Boosted channel programming of memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Apr 17, 2018·13 cites·25 claims
- 0994US9070442B2Memory devices with local and global devices at substantially the same level above stacked tiers of memory cells and methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·18 cites·42 claims
- 1093US11983067B2Adjustment of code rate as function of memory endurance state metricMICRON TECHNOLOGY INC·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 1193US11640262B2Implementing variable number of bits per cell on storage devicesMICRON TECHNOLOGY INC·Filed 2020·Granted May 2, 2023·3 cites·17 claims
- 1292US9607692B2Threshold voltage distribution determinationMICRON TECHNOLOGY INC·Filed 2015·Granted Mar 28, 2017·11 cites·17 claims
- 1390US2025349364A1Acceleration of data queries in memoryLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1489US9159736B2Data line arrangement and pillar arrangement in apparatusesMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 13, 2015·9 cites·22 claims
- 1588US11385819B2Separate partition for buffer and snapshot memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 12, 2022·2 cites·27 claims
- 1688US11360700B2Partitions within snapshot memory for buffer and snapshot memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 14, 2022·2 cites·20 claims
- 1787US10043751B2Three dimensional storage cell array with highly dense and scalable word line design approachINTEL CORP·Filed 2016·Granted Aug 7, 2018·5 cites·14 claims
- 1886US7499325B2Flash memory device with improved erase operationINTEL CORP·Filed 2006·Granted Mar 3, 2009·17 cites·28 claims
- 1985US10685702B2Memory array reset read operationMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 16, 2020·5 cites·20 claims
- 2085US7112488B2Source lines for NAND memory devicesMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 26, 2006·28 cites·39 claims
- 2184US10593624B2Three dimensional storage cell array with highly dense and scalable word line design approachINTEL CORP·Filed 2018·Granted Mar 17, 2020·3 cites·6 claims
- 2284US10014061B1Methods and apparatus having multiple select gates of different ranges of threshold voltages connected in series with memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 3, 2018·7 cites·22 claims
- 2384US8053321B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesROUND ROCK RES LLC·Filed 2010·Granted Nov 8, 2011·4 cites·20 claims
- 2483US8631288B2Methods, devices, and systems for data sensing in a memory systemHELM MARK A·Filed 2011·Granted Jan 14, 2014·8 cites·36 claims
- 2583US8238170B2Non-volatile memory cell healingMIHNEA ANDREI·Filed 2010·Granted Aug 7, 2012·7 cites·24 claims
- 2683US5747855ACMOS integrated circuitry with Halo and LDD regionsMICRON TECHNOLOGY INC·Filed 1997·Granted May 5, 1998·38 cites·4 claims
- 2782US9754683B2Method and system to obtain state confidence data using multistrobe read of a non-volatile memoryGOLDMAN MATTHEW·Filed 2012·Granted Sep 5, 2017·8 cites·27 claims
- 2882US9431421B2Data line arrangement and pillar arrangement in apparatusesMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 30, 2016·3 cites·18 claims
- 2982US8203876B2Reducing effects of erase disturb in a memory deviceGODA AKIRA·Filed 2009·Granted Jun 19, 2012·11 cites·14 claims
- 3082US7701780B2Non-volatile memory cell healingMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 20, 2010·11 cites·20 claims
- 3180US12367935B2Acceleration of data queries in memoryLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Jul 22, 2025·0 cites·18 claims
- 3280US9972391B2Apparatus, systems, and methods to operate a memoryMICRON TECHNOLOGY INC·Filed 2015·Granted May 15, 2018·4 cites·26 claims
- 3380US5776806AMethod of forming CMOS integrated circuitry having halo regionsMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 7, 1998·30 cites·5 claims
- 3479US12326782B2Adjustment of code rate as function of memory endurance state metricMICRON TECHNOLOGY INC·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 3579US11301346B2Separate trims for buffer and snapshotMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 12, 2022·1 cites·18 claims
- 3679US9620229B2Three dimensional memory control circuitryINTEL CORP·Filed 2015·Granted Apr 11, 2017·4 cites·34 claims
- 3779US9202536B2Three dimensional memory control circuitryHELM MARK·Filed 2012·Granted Dec 1, 2015·7 cites·17 claims
- 3879US7265012B2Formation of standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 4, 2007·4 cites·32 claims
- 3979US2025094364A1Status check using chip enable pinMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4078US8374028B2Sense operation in a memory deviceMICRON TECHNOLOGY INC·Filed 2011·Granted Feb 12, 2013·5 cites·22 claims
- 4178US7879665B2Structure and method of fabricating a transistor having a trench gateROUND ROCK RES LLC·Filed 2008·Granted Feb 1, 2011·5 cites·17 claims
- 4278US5683927AMethod of forming CMOS integrated circuitryMICRON TECHNOLOGY INC·Filed 1996·Granted Nov 4, 1997·28 cites·16 claims
- 4377US9001577B2Memory cell sensingGOLDMAN MATTHEW·Filed 2012·Granted Apr 7, 2015·5 cites·39 claims
- 4477US7274065B2Source lines for NAND memory devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 25, 2007·5 cites·16 claims
- 4577US6124616AIntegrated circuitry comprising halo regions and LDD regionsMICRON TECHNOLOGY INC·Filed 1998·Granted Sep 26, 2000·27 cites·5 claims
- 4676US10289484B2Apparatuses and methods for generating probabilistic information with current integration sensingMICRON TECHNOLOGY INC·Filed 2016·Granted May 14, 2019·3 cites·22 claims
- 4776US6849492B2Method for forming standard voltage threshold and low voltage threshold MOSFET devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 1, 2005·12 cites·21 claims
- 4876US6268250B1Efficient fabrication process for dual well type structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 31, 2001·30 cites·26 claims
- 4975US8902650B2Memory devices and operating methods for a memory deviceGOLDMAN MATTHEW·Filed 2012·Granted Dec 2, 2014·6 cites·17 claims
- 5075US7262102B2Reduction of field edge thinning in peripheral devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 28, 2007·5 cites·15 claims
Showing the top 50 of 132 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →