Inventor · disambiguated record
Fenton R. Mcfeely
Also filed as: MCFEELY FENTON · MCFEELY FENTON R · MCFEELY FENTON READ
59 granted patents·24 pending applications·1,097 citations·filing 1993–2015
99Inventor score
Top patents by PatentIndex Score
83 records- 0198US7488656B2Removal of charged defects from metal oxide-gate stacksIBM·Filed 2005·Granted Feb 10, 2009·79 cites·10 claims
- 0297US6444592B1Interfacial oxidation process for high-k gate dielectric process integrationIBM·Filed 2000·Granted Sep 3, 2002·191 cites·22 claims
- 0396US6982230B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2002·Granted Jan 3, 2006·112 cites·14 claims
- 0491US7270848B2Method for increasing deposition rates of metal layers from metal-carbonyl precursorsIBM·Filed 2004·Granted Sep 18, 2007·45 cites·15 claims
- 0589US8242030B2Activation of graphene buffer layers on silicon carbide by ultra low temperature oxidationHANNON JAMES B·Filed 2009·Granted Aug 14, 2012·20 cites·19 claims
- 0689US6448131B1Method for increasing the capacitance of a trench capacitorIBM·Filed 2001·Granted Sep 10, 2002·48 cites·38 claims
- 0788US6989321B2Low-pressure deposition of metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jan 24, 2006·41 cites·32 claims
- 0888US6974531B2Method for electroplating on resistive substratesIBM·Filed 2002·Granted Dec 13, 2005·20 cites·23 claims
- 0986US6380075B1Method for forming an open-bottom liner for a conductor in an electronic structure and device formedIBM·Filed 2000·Granted Apr 30, 2002·36 cites·10 claims
- 1084US6924223B2Method of forming a metal layer using an intermittent precursor gas flow processIBM·Filed 2003·Granted Aug 2, 2005·32 cites·53 claims
- 1184US6566281B1Nitrogen-rich barrier layer and structures formedIBM·Filed 1997·Granted May 20, 2003·60 cites·27 claims
- 1283US7345184B2Method and system for refurbishing a metal carbonyl precursorTOKYO ELECTRON LTD·Filed 2005·Granted Mar 18, 2008·5 cites·11 claims
- 1382US6787912B2Barrier material for copper structuresIBM·Filed 2002·Granted Sep 7, 2004·27 cites·22 claims
- 1481US7998864B2Noble metal cap for interconnect structuresIBM·Filed 2008·Granted Aug 16, 2011·8 cites·15 claims
- 1579US8232647B2Structure and process for metallization in high aspect ratio featuresYANG CHIH-CHAO·Filed 2008·Granted Jul 31, 2012·6 cites·7 claims
- 1679US7884018B2Method for improving the selectivity of a CVD processIBM·Filed 2007·Granted Feb 8, 2011·6 cites·23 claims
- 1779US6911229B2Structure comprising an interlayer of palladium and/or platinum and method for fabrication thereofIBM·Filed 2002·Granted Jun 28, 2005·20 cites·14 claims
- 1879US5789312AMethod of fabricating mid-gap metal gates compatible with ultra-thin dielectricsIBM·Filed 1996·Granted Aug 4, 1998·49 cites·22 claims
- 1978US7067422B2Method of forming a tantalum-containing gate electrode structureIBM·Filed 2004·Granted Jun 27, 2006·23 cites·31 claims
- 2077US7488512B2Method for preparing solid precursor tray for use in solid precursor evaporation systemTOKYO ELECTRON LTD·Filed 2004·Granted Feb 10, 2009·15 cites·3 claims
- 2177US6416812B1Method for depositing copper onto a barrier layerIBM·Filed 2000·Granted Jul 9, 2002·20 cites·18 claims
- 2275US7115959B2Method of forming metal/high-k gate stacks with high mobilityIBM·Filed 2004·Granted Oct 3, 2006·17 cites·26 claims
- 2374US6756651B2CMOS-compatible metal-semiconductor-metal photodetectorIBM·Filed 2001·Granted Jun 29, 2004·18 cites·25 claims
- 2473US6812143B2Process of forming copper structuresIBM·Filed 2002·Granted Nov 2, 2004·19 cites·15 claims
- 2573US6452276B1Ultra thin, single phase, diffusion barrier for metal conductorsIBM·Filed 1998·Granted Sep 17, 2002·38 cites·22 claims
- 2672US7667277B2TiC as a thermally stable p-metal carbide on high k SiO2 gate stacksIBM·Filed 2005·Granted Feb 23, 2010·4 cites·18 claims
- 2770US7078341B2Method of depositing metal layers from metal-carbonyl precursorsIBM·Filed 2003·Granted Jul 18, 2006·12 cites·40 claims
- 2868US7678421B2Method for increasing deposition rates of metal layers from metal-carbonyl precursorsTOKYO ELECTRON LTD·Filed 2007·Granted Mar 16, 2010·2 cites·24 claims
- 2966US9048296B2Method to fabricate copper wiring structures and structures formed therebyMCFEELY FENTON READ·Filed 2011·Granted Jun 2, 2015·2 cites·17 claims
- 3066US6803266B2Process for passivating the semiconductor-dielectric interface of a MOS device and MOS device formed therebyIBM·Filed 2003·Granted Oct 12, 2004·9 cites·20 claims
- 3166US6603181B2MOS device having a passivated semiconductor-dielectric interfaceIBM·Filed 2001·Granted Aug 5, 2003·9 cites·7 claims
- 3265US9392690B2Method and structure to improve the conductivity of narrow copper filled viasGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 12, 2016·1 cites·15 claims
- 3365US8785320B2Structure and process for metallization in high aspect ratio featuresIBM·Filed 2013·Granted Jul 22, 2014·1 cites·18 claims
- 3465US8450204B2Structure and process for metallization in high aspect ratio featuresYANG CHIH-CHAO·Filed 2012·Granted May 28, 2013·1 cites·15 claims
- 3564US7863083B2High temperature processing compatible metal gate electrode for pFETS and methods for fabricationIBM·Filed 2008·Granted Jan 4, 2011·1 cites·18 claims
- 3664US7749802B2Process for chemical vapor deposition of materials with via filling capability and structure formed therebyIBM·Filed 2007·Granted Jul 6, 2010·1 cites·18 claims
- 3763US7964497B2Structure to facilitate plating into high aspect ratio viasIBM·Filed 2008·Granted Jun 21, 2011·2 cites·15 claims
- 3863US6770500B2Process of passivating a metal-gated complementary metal oxide semiconductorIBM·Filed 2002·Granted Aug 3, 2004·10 cites·20 claims
- 3960US8661664B2Techniques for forming narrow copper filled vias having improved conductivityMCFEELY FENTON READ·Filed 2010·Granted Mar 4, 2014·1 cites·22 claims
- 4060US7521346B2Method of forming HfSiN metal for n-FET applicationsIBM·Filed 2007·Granted Apr 21, 2009·1 cites·1 claims
- 4160US6091122AFabrication of mid-cap metal gates compatible with ultra-thin dielectricsIBM·Filed 1998·Granted Jul 18, 2000·20 cites·14 claims
- 4260US2011052797A1Low Temperature Plasma-Free Method for the Nitridation of CopperIBM·Filed 2009·Application pending·0 cites
- 4359US2005199502A1Method for electroplating on resistive substratesIBM·Filed 2005·Application pending·0 cites
- 4458US6660330B2Method for depositing metal films onto substrate surfaces utilizing a chamfered ring supportIBM·Filed 2001·Granted Dec 9, 2003·6 cites·19 claims
- 4557US7439180B2Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD)IBM·Filed 2006·Granted Oct 21, 2008·1 cites·20 claims
- 4656US2010009164A1Process for chemical vapor deposition of materials with via filling capability and structure formed therebyIBM·Filed 2009·Application pending·0 cites
- 4753US7189431B2Method for forming a passivated metal layerIBM·Filed 2004·Granted Mar 13, 2007·5 cites·16 claims
- 4852US7566938B2Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structuresIBM·Filed 2005·Granted Jul 28, 2009·0 cites·13 claims
- 4952US6238737B1Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed therebyIBM·Filed 1999·Granted May 29, 2001·14 cites·20 claims
- 5051US7419702B2Method for processing a substrateTOKYO ELECTRON LTD·Filed 2004·Granted Sep 2, 2008·1 cites·18 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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