Inventor · disambiguated record
Satyendranath Mukherjee
Also filed as: MUKHERJEE SATEYNDRANATH · MUKHERJEE SATYENDRANATH
16 granted patents·1 pending application·636 citations·filing 1987–2001
95Inventor score
Files withPHILIPS CORP11PHILIPS ELECTRONICS NA3KONINKL PHILIPS ELECTRONICS NV2PHILIP ELECTRONICS NORTH AMERI1
Top patents by PatentIndex Score
17 records- 0194US4939566ASemiconductor switch with parallel DMOS and IGTPHILIPS CORP·Filed 1987·Granted Jul 3, 1990·69 cites·11 claims
- 0292US5146426AElectrically erasable and programmable read only memory with trench structurePHILIPS CORP·Filed 1990·Granted Sep 8, 1992·114 cites·10 claims
- 0389US4926074ASemiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistorPHILIPS CORP·Filed 1988·Granted May 15, 1990·61 cites·7 claims
- 0488US5606521AElectrically erasable and programmable read only memory with non-uniform dielectric thicknessPHILIPS ELECTRONICS NA·Filed 1995·Granted Feb 25, 1997·84 cites·10 claims
- 0584US5751038AElectrically erasable and programmable read only memory (EEPROM) having multiple overlapping metallization layersPHILIPS ELECTRONICS NA·Filed 1996·Granted May 12, 1998·50 cites·8 claims
- 0682US5268586AVertical power MOS device with increased ruggedness and method of fabricationPHILIPS CORP·Filed 1992·Granted Dec 7, 1993·46 cites·5 claims
- 0772US5229312ANonvolatile trench memory device and self-aligned method for making such a devicePHILIPS CORP·Filed 1992·Granted Jul 20, 1993·32 cites·7 claims
- 0870US6559068B2Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted May 6, 2003·16 cites·27 claims
- 0969US5243214APower integrated circuit with latch-up preventionPHILIPS CORP·Filed 1992·Granted Sep 7, 1993·31 cites·8 claims
- 1063US4893212AProtection of power integrated circuits against load voltage surgesPHILIPS CORP·Filed 1988·Granted Jan 9, 1990·14 cites·7 claims
- 1162US6011278ALateral silicon carbide semiconductor device having a drift region with a varying doping levelPHILIPS ELECTRONICS NA·Filed 1997·Granted Jan 4, 2000·22 cites·5 claims
- 1261US5374571AVertical power MOS device with increased ruggedness and method of fabricationPHILIPS CORP·Filed 1993·Granted Dec 20, 1994·18 cites·5 claims
- 1360US5485292AHigh voltage differential sensor having a capacitive attenuatorPHILIPS CORP·Filed 1995·Granted Jan 16, 1996·24 cites·1 claims
- 1460US5034790AMOS transistor with semi-insulating field plate and surface-adjoining top layerPHILIPS CORP·Filed 1990·Granted Jul 23, 1991·21 cites·10 claims
- 1553US5486485AMethod of manufacturing a reflective displayPHILIP ELECTRONICS NORTH AMERI·Filed 1994·Granted Jan 23, 1996·20 cites·7 claims
- 1651US5446300ASemiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuitPHILIPS CORP·Filed 1992·Granted Aug 29, 1995·14 cites·29 claims
- 1737US2003107050A1High frequency high voltage silicon-on-insulator device with mask variable inversion channel and method for forming the sameKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →