Inventor · disambiguated record
Robert J. Strain
Also filed as: STRAIN ROBERT · STRAIN ROBERT J · STRAIN ROBERT JOSEPH
26 granted patents·3 pending applications·463 citations·filing 1974–2023
97Inventor score
Files withNAT SEMICONDUCTOR CORP5SEMI SOLUTIONS LLC4TOWER SEMICONDUCTOR LTD4FAIRCHILD SEMICONDUCTOR3BELL TELEPHONE LABOR INC2
Top patents by PatentIndex Score
29 records- 0195US7683433B2Apparatus and method for improving drive-strength and leakage of deep submicron MOS transistorsSEMI SOLUTION LLC·Filed 2006·Granted Mar 23, 2010·50 cites·49 claims
- 0294US11373696B1FFT-dramNIF/T LLC·Filed 2021·Granted Jun 28, 2022·4 cites·20 claims
- 0393US7898297B2Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuitsSEMI SOLUTION LLC·Filed 2007·Granted Mar 1, 2011·34 cites·7 claims
- 0489US8048732B2Method for reducing leakage current and increasing drive current in a metal-oxide semiconductor (MOS) transistorSEMI SOLUTIONS LLC·Filed 2010·Granted Nov 1, 2011·10 cites·20 claims
- 0587US7544557B2Gate defined Schottky diodeTOWER SEMICONDUCTOR LTD·Filed 2005·Granted Jun 9, 2009·18 cites·6 claims
- 0687US5729075ATuneable microelectromechanical system resonatorNAT SEMICONDUCTOR CORP·Filed 1997·Granted Mar 17, 1998·98 cites·13 claims
- 0785US4585299AProcess for fabricating optical wave-guiding components and components made by the processFAIRCHILD SEMICONDUCTOR·Filed 1983·Granted Apr 29, 1986·42 cites·23 claims
- 0883US6590797B1Multi-bit programmable memory cell having multiple anti-fuse elementsTOWER SEMICONDUCTOR LTD·Filed 2002·Granted Jul 8, 2003·32 cites·28 claims
- 0982US5912779AMethod of reading and writing data on a magnetic mediumNAT SEMICONDUCTOR CORP·Filed 1996·Granted Jun 15, 1999·29 cites·9 claims
- 1072US9847404B2Fluctuation resistant FinFETGOLD STANDARD SIMULATIONS LTD·Filed 2013·Granted Dec 19, 2017·3 cites·21 claims
- 1168US2024125553A1Emergency cooling-water vacuum system and methodSAFE FLOW LLC·Filed 2023·Application pending·0 cites
- 1267US7485941B2Cobalt silicide schottky diode on isolated wellTOWER SEMICONDUCTOR LTD·Filed 2005·Granted Feb 3, 2009·4 cites·17 claims
- 1365US6809948B2Mask programmable read-only memory (ROM) cellTOWER SEMICONDUCTOR LTD·Filed 2003·Granted Oct 26, 2004·13 cites·2 claims
- 1463US11894039B2Fft-dramNIF/T LLC·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 1559US4480199AIdentification of repaired integrated circuitsFAIRCHILD CAMERA INSTR CO·Filed 1982·Granted Oct 30, 1984·22 cites·15 claims
- 1656US5644457AMultiple gap read/write head for data storage devicesNAT SEMICONDUCTOR CORP·Filed 1995·Granted Jul 1, 1997·9 cites·11 claims
- 1755US8247840B2Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diodeKAPOOR ASHOK KUMAR·Filed 2009·Granted Aug 21, 2012·1 cites·18 claims
- 1855US4603471AMethod for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regionsFAIRCHILD SEMICONDUCTOR·Filed 1984·Granted Aug 5, 1986·17 cites·6 claims
- 1955US4347656AMethod of fabricating polysilicon electrodesBELL TELEPHONE LABOR INC·Filed 1980·Granted Sep 7, 1982·13 cites·1 claims
- 2054US5517453AMemory with multiple erase modesNAT SEMICONDUCTOR CORP·Filed 1994·Granted May 14, 1996·15 cites·17 claims
- 2152US5426539AMultiple gap read/write head for data storage devicesNAT SEMICONDUCTOR CORP·Filed 1992·Granted Jun 20, 1995·6 cites·38 claims
- 2250US4559696AIon implantation to increase emitter energy gap in bipolar transistorsFAIRCHILD CAMERA INSTR CO·Filed 1984·Granted Dec 24, 1985·15 cites·10 claims
- 2348US9379214B2Reduced variation MOSFET using a drain-extension-last processSEMI SOLUTIONS LLC·Filed 2015·Granted Jun 28, 2016·0 cites·19 claims
- 2448US2016260816A1Reduced Variation MOSFET Using a Drain-Extension-Last ProcessSEMI SOLUTIONS LLC·Filed 2016·Application pending·0 cites
- 2545US7863689B2Apparatus for using a well current source to effect a dynamic threshold voltage of a MOS transistorSEMI SOLUTIONS LLC·Filed 2009·Granted Jan 4, 2011·0 cites·9 claims
- 2643US5453389ADefect-free bipolar processNAT SEMICONDUCTOR INC·Filed 1993·Granted Sep 26, 1995·13 cites·17 claims
- 2743US3935477AAnalog inverter for use in charge transfer apparatusBELL TELEPHONE LABOR INC·Filed 1974·Granted Jan 27, 1976·5 cites·6 claims
- 2842US4728998ACMOS circuit having a reduced tendency to latchFAIRCHILD SEMICONDUCTOR·Filed 1986·Granted Mar 1, 1988·10 cites·9 claims
- 2941US2014103437A1Random Doping Fluctuation Resistant FinFETGOLD STANDARD SIMULATIONS LTD·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →