Inventor · disambiguated record
Shyi-Yuan Wu
Also filed as: WU SHYI-YUAN
53 granted patents·8 pending applications·105 citations·filing 2007–2021
97Inventor score
Top patents by PatentIndex Score
61 records- 0195US8664690B1Bi-directional triode thyristor for high voltage electrostatic discharge protectionMACRONIX INT CO LTD·Filed 2012·Granted Mar 4, 2014·26 cites·19 claims
- 0292US9520492B2Semiconductor device having buried layerMACRONIX INT CO LTD·Filed 2015·Granted Dec 13, 2016·9 cites·10 claims
- 0391US9397090B1Semiconductor deviceMACRONIX INT CO LTD·Filed 2015·Granted Jul 19, 2016·8 cites·20 claims
- 0488US9082841B1Semiconductor device having metal layer over drift regionMACRONIX INT CO LTD·Filed 2014·Granted Jul 14, 2015·9 cites·20 claims
- 0579US8482066B2Semiconductor deviceCHU CHIEN-WEN·Filed 2011·Granted Jul 9, 2013·6 cites·18 claims
- 0678US8519434B2Self detection device for high voltage ESD protectionCHEN HSIN-LIANG·Filed 2011·Granted Aug 27, 2013·7 cites·20 claims
- 0776US8610206B2Split-gate lateral diffused metal oxide semiconductor deviceCHU CHIEN-WEN·Filed 2011·Granted Dec 17, 2013·4 cites·19 claims
- 0876US8017486B2Method of fabricating low on-resistance lateral double-diffused MOS deviceMACRONIX INT CO LTD·Filed 2007·Granted Sep 13, 2011·6 cites·8 claims
- 0975US9397205B1Semiconductor deviceMACRONIX INT CO LTD·Filed 2015·Granted Jul 19, 2016·2 cites·14 claims
- 1072US9331143B1Semiconductor structure having field plates over resurf regions in semiconductor substrateMACRONIX INT CO LTD·Filed 2014·Granted May 3, 2016·3 cites·19 claims
- 1170US9269806B2Semiconductor device and method of fabricating sameMACRONIX INT CO LTD·Filed 2013·Granted Feb 23, 2016·2 cites·7 claims
- 1268US8921933B2Semiconductor structure and method for operating the sameWU SHYI-YUAN·Filed 2011·Granted Dec 30, 2014·3 cites·14 claims
- 1368US8648386B2Semiconductor structure and manufacturing method for the same and ESD circuitCHEN HSIN-LIANG·Filed 2011·Granted Feb 11, 2014·2 cites·18 claims
- 1467US9312380B2Semiconductor device having deep implantation region and method of fabricating sameMACRONIX INT CO LTD·Filed 2014·Granted Apr 12, 2016·2 cites·17 claims
- 1567US9257534B2Single poly plate low on resistance extended drain metal oxide semiconductor deviceMACRONIX INT CO LTD·Filed 2015·Granted Feb 9, 2016·1 cites·17 claims
- 1667US8969962B2Single poly plate low on resistance extended drain metal oxide semiconductor deviceMACRONIX INT CO LTD·Filed 2013·Granted Mar 3, 2015·1 cites·15 claims
- 1766US9466700B2Semiconductor device and method of fabricating sameMACRONIX INT CO LTD·Filed 2015·Granted Oct 11, 2016·1 cites·20 claims
- 1866US7868370B2Single gate nonvolatile memory cell with transistor and capacitorMACRONIX INT CO LTD·Filed 2008·Granted Jan 11, 2011·3 cites·21 claims
- 1965US8928095B2Semiconductor device having reduced leakage current at breakdown and method of fabricating thereofMACRONIX INT CO LTD·Filed 2013·Granted Jan 6, 2015·1 cites·21 claims
- 2063US8890244B2Lateral power MOSFET structure and method of manufactureLIN CHENG-CHI·Filed 2010·Granted Nov 18, 2014·2 cites·7 claims
- 2161US9070766B1Semiconductor device and method of forming the sameMACRONIX INT CO LTD·Filed 2014·Granted Jun 30, 2015·1 cites·12 claims
- 2260US8525243B2Single gate semiconductor deviceLIN CHENG-CHI·Filed 2011·Granted Sep 3, 2013·1 cites·20 claims
- 2359US8546917B2Electrostatic discharge protection having parallel NPN and PNP bipolar junction transistorsCHEN HSIN-LIANG·Filed 2011·Granted Oct 1, 2013·1 cites·13 claims
- 2458US7999296B2Single gate nonvolatile memory cell with transistor and capacitorMACRONIX INT CO LTD·Filed 2008·Granted Aug 16, 2011·1 cites·22 claims
- 2557US8354716B2Semiconductor devices and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2010·Granted Jan 15, 2013·1 cites·15 claims
- 2656US8940609B2MOS device and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2014·Granted Jan 27, 2015·0 cites·11 claims
- 2756US8525261B2Semiconductor device having a split gate and a super-junction structureWU SHYI-YUAN·Filed 2010·Granted Sep 3, 2013·1 cites·28 claims
- 2856US8482059B2Semiconductor structure and manufacturing method for the sameLIN CHEN-YUAN·Filed 2011·Granted Jul 9, 2013·1 cites·10 claims
- 2953US9064955B2Split-gate lateral diffused metal oxide semiconductor deviceMACRONIX INT CO LTD·Filed 2013·Granted Jun 23, 2015·0 cites·22 claims
- 3053US8878241B2Semiconductor structure and manufacturing method for the same and ESD circuitMACRONIX INT CO LTD·Filed 2013·Granted Nov 4, 2014·0 cites·18 claims
- 3153US8679930B2Semiconductor structure and manufacturing method for the sameMACRONIX INT CO LTD·Filed 2013·Granted Mar 25, 2014·0 cites·9 claims
- 3252US8980717B2Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2013·Granted Mar 17, 2015·0 cites·11 claims
- 3351US11742422B2Semiconductor device and method of fabricating the sameMACRONIX INT CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·16 claims
- 3451US8963238B2Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the sameMACRONIX INT CO LTD·Filed 2014·Granted Feb 24, 2015·0 cites·16 claims
- 3550US9018069B2Semiconductor structure and a method for manufacturing the sameMACRONIX INT CO LTD·Filed 2013·Granted Apr 28, 2015·0 cites·11 claims
- 3649US8981451B2Semiconductor memory devicesMACRONIX INT CO LTD·Filed 2013·Granted Mar 17, 2015·0 cites·8 claims
- 3748US8829615B2MOS device and method of manufacturing the sameCHEN CHIEN-CHUNG·Filed 2011·Granted Sep 9, 2014·0 cites·14 claims
- 3847US9418981B2High-voltage electrostatic discharge device incorporating a metal-on-semiconductor and bipolar junction structureMACRONIX INT CO LTD·Filed 2014·Granted Aug 16, 2016·0 cites·18 claims
- 3945US10121889B2High voltage semiconductor deviceMACRONIX INT CO LTD·Filed 2014·Granted Nov 6, 2018·0 cites·13 claims
- 4045US9202862B2Semiconductor structure and manufacturing method of the sameMACRONIX INT CO LTD·Filed 2014·Granted Dec 1, 2015·0 cites·18 claims
- 4145US8610209B2Ultra-high voltage N-type-metal-oxide-semiconductor (UHV NMOS) device and methods of manufacturing the sameCHEN CHIEH-CHIH·Filed 2011·Granted Dec 17, 2013·0 cites·13 claims
- 4245US8564099B2Semiconductor structure and a method for manufacturing the sameCHEN CHIEH-CHIH·Filed 2011·Granted Oct 22, 2013·0 cites·11 claims
- 4345US8362558B2Low on-resistance lateral double-diffused MOS deviceMACRONIX INT CO LTD·Filed 2011·Granted Jan 29, 2013·0 cites·8 claims
- 4444US9263432B2High voltage semiconductor device and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2014·Granted Feb 16, 2016·0 cites·17 claims
- 4543US9613952B2Semiconductor ESD protection deviceMACRONIX INT CO LTD·Filed 2014·Granted Apr 4, 2017·0 cites·20 claims
- 4643US8698240B2Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the sameCHAN WING CHOR·Filed 2010·Granted Apr 15, 2014·0 cites·14 claims
- 4743US8487360B2Semiconductor memory devices with high gate coupling ratio and methods of manufacturing the sameLIN CHENG-CHI·Filed 2010·Granted Jul 16, 2013·0 cites·14 claims
- 4842US9653561B2Low on resistance semiconductor deviceMACRONIX INT CO LTD·Filed 2013·Granted May 16, 2017·0 cites·16 claims
- 4942US2015214361A1Semiconductor Device Having Partial Insulation Structure And Method Of Fabricating SameMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 5042US2014197467A1High voltage junction field effect transistor structureMACRONIX INT CO LTD·Filed 2013·Application pending·0 cites
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →