Inventor · disambiguated record
Zhitao Diao
Also filed as: DIAO ZHITAO
43 granted patents·5 pending applications·1,975 citations·filing 2003–2024
98Inventor score
Files withGRANDIS INC17WESTERN DIGITAL FREMONT LLC11WESTERN DIGITAL TECH INC9WATTS STEVEN M2APALKOV DMYTRO1
Top patents by PatentIndex Score
48 records- 0199US8760818B1Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloysWESTERN DIGITAL FREMONT LLC·Filed 2013·Granted Jun 24, 2014·149 cites·13 claims
- 0299US7187577B1Method and system for providing current balanced writing for memory cells and magnetic devicesGRANDIS INC·Filed 2005·Granted Mar 6, 2007·393 cites·36 claims
- 0398US8582253B1Magnetic sensor having a high spin polarization reference layerZHENG YUANKAI·Filed 2012·Granted Nov 12, 2013·160 cites·20 claims
- 0498US7430135B2Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current densityGRANDIS INC·Filed 2005·Granted Sep 30, 2008·218 cites·35 claims
- 0598US7369427B2Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elementsGRANDIS INC·Filed 2004·Granted May 6, 2008·201 cites·26 claims
- 0698US7289356B2Fast magnetic memory devices utilizing spin transfer and magnetic elements used thereinGRANDIS INC·Filed 2005·Granted Oct 30, 2007·193 cites·49 claims
- 0798US7242045B2Spin transfer magnetic element having low saturation magnetization free layersGRANDIS INC·Filed 2004·Granted Jul 10, 2007·220 cites·46 claims
- 0898US6888704B1Method and system for providing high sensitivity giant magnetoresistive sensorsWESTERN DIGITAL FREMONT INC·Filed 2003·Granted May 3, 2005·173 cites·18 claims
- 0995US11430592B2Magnetic elements of amorphous based dual free layer structures and recording devices using such elementsWESTERN DIGITAL TECH INC·Filed 2021·Granted Aug 30, 2022·2 cites·22 claims
- 1094US10755733B1Read head including semiconductor spacer and long spin diffusion length nonmagnetic conductive material and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 25, 2020·17 cites·14 claims
- 1194US7663848B1Magnetic memories utilizing a magnetic element having an engineered free layerGRANDIS INC·Filed 2006·Granted Feb 16, 2010·31 cites·24 claims
- 1293US7916433B2Magnetic element utilizing free layer engineeringGRANDIS INC·Filed 2010·Granted Mar 29, 2011·12 cites·15 claims
- 1393US7760474B1Magnetic element utilizing free layer engineeringGRANDIS INC·Filed 2006·Granted Jul 20, 2010·23 cites·4 claims
- 1492US7859034B2Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layerGRANDIS INC·Filed 2009·Granted Dec 28, 2010·24 cites·10 claims
- 1591US9214172B2Method of manufacturing a magnetic read headWESTERN DIGITAL FREMONT LLC·Filed 2014·Granted Dec 15, 2015·11 cites·12 claims
- 1690US9214169B1Magnetic recording read transducer having a laminated free layerWESTERN DIGITAL FREMONT LLC·Filed 2014·Granted Dec 15, 2015·8 cites·15 claims
- 1789US9007725B1Sensor with positive coupling between dual ferromagnetic free layer laminatesWESTERN DIGITAL FREMONT LLC·Filed 2014·Granted Apr 14, 2015·10 cites·23 claims
- 1888US9412787B2Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·6 cites·20 claims
- 1987US7973349B2Magnetic device having multilayered free ferromagnetic layerGRANDIS INC·Filed 2006·Granted Jul 5, 2011·20 cites·31 claims
- 2087US7851840B2Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrierGRANDIS INC·Filed 2006·Granted Dec 14, 2010·18 cites·44 claims
- 2186US9042057B1Methods for providing magnetic storage elements with high magneto-resistance using Heusler alloysWESTERN DIGITAL FREMONT LLC·Filed 2014·Granted May 26, 2015·6 cites·15 claims
- 2284US11211083B1MAMR head with synthetic antiferromagnetic (SAF) coupled notchWESTERN DIGITAL TECH INC·Filed 2020·Granted Dec 28, 2021·2 cites·21 claims
- 2384US7777261B2Magnetic device having stabilized free ferromagnetic layerGRANDIS INC·Filed 2005·Granted Aug 17, 2010·13 cites·68 claims
- 2483US11776725B2Magnetic elements of amorphous based dual free layer structures and recording devices using such elementsWESTERN DIGITAL TECH INC·Filed 2022·Granted Oct 3, 2023·0 cites·22 claims
- 2582US7982275B2Magnetic element having low saturation magnetizationGRANDIS INC·Filed 2007·Granted Jul 19, 2011·14 cites·34 claims
- 2682US7738287B2Method and system for providing field biased magnetic memory devicesGRANDIS INC·Filed 2007·Granted Jun 15, 2010·12 cites·30 claims
- 2780US9508365B1Magnetic reader having a crystal decoupling structureWESTERN DIGITAL (FREMONT) LLC·Filed 2015·Granted Nov 29, 2016·5 cites·16 claims
- 2880US8913350B2Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsWATTS STEVEN M·Filed 2009·Granted Dec 16, 2014·10 cites·20 claims
- 2980US7888755B2Magnetic storage device with intermediate layers having different sheet resistivitiesSONY CORP·Filed 2005·Granted Feb 15, 2011·12 cites·10 claims
- 3079US9147408B1Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning fieldWESTERN DIGITAL FREMONT LLC·Filed 2014·Granted Sep 29, 2015·3 cites·11 claims
- 3177US7821087B2Spin transfer magnetic element having low saturation magnetization free layersGRANDIS INC·Filed 2007·Granted Oct 26, 2010·5 cites·21 claims
- 3271US8984740B1Process for providing a magnetic recording transducer having a smooth magnetic seed layerWESTERN DIGITAL FREMONT LLC·Filed 2012·Granted Mar 24, 2015·2 cites·10 claims
- 3364US12106784B2Read sensor with ordered heusler alloy free layer and semiconductor barrier layerWESTERN DIGITAL TECH INC·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 3464US11415645B2Magnetic sensor array with one TMR stack having two free layersWESTERN DIGITAL TECH INC·Filed 2019·Granted Aug 16, 2022·0 cites·17 claims
- 3562US9830936B2Magnetic read head with antiferromagentic layerWESTERN DIGITAL (FREMONT) LLC·Filed 2015·Granted Nov 28, 2017·1 cites·4 claims
- 3659US11598828B2Magnetic sensor array with different RA TMR filmWESTERN DIGITAL TECH INC·Filed 2019·Granted Mar 7, 2023·0 cites·23 claims
- 3758US12374356B1Pinned shield with controllable exchange bias fieldWESTERN DIGITAL TECH INC·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 3853US11125840B2Ultra-low RA and high TMR magnetic sensor with radiation reflective leadWESTERN DIGITAL TECH INC·Filed 2020·Granted Sep 21, 2021·0 cites·22 claims
- 3951US9858951B1Method for providing a multilayer AFM layer in a read sensorWESTERN DIGITAL (FREMONT) LLC·Filed 2015·Granted Jan 2, 2018·0 cites·18 claims
- 4051US7495303B2Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elementsGRANDIS INC·Filed 2007·Granted Feb 24, 2009·0 cites·1 claims
- 4150US10446209B2Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsWATTS STEVEN M·Filed 2011·Granted Oct 15, 2019·1 cites·11 claims
- 4249US11385305B2Magnetic sensor array with dual TMR filmWESTERN DIGITAL TECH INC·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 4348US2011031569A1Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elementsGRANDIS INC·Filed 2010·Application pending·0 cites
- 4446US2006128038A1Method and system for providing a highly textured magnetoresistance element and magnetic memoryPAKALA MAHENDRA·Filed 2005·Application pending·0 cites
- 4544US2015380026A1Heated afm layer deposition and cooling process for tmr magnetic recording sensor with high pinning fieldWESTERN DIGITAL FREMONT LLC·Filed 2015·Application pending·0 cites
- 4643US2007085068A1Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cellsAPALKOV DMYTRO·Filed 2005·Application pending·0 cites
- 4740US2007246787A1On-plug magnetic tunnel junction devices based on spin torque transfer switchingWANG LIEN-CHANG·Filed 2006·Application pending·0 cites
- 4832US8476723B2Magnetic element having low saturation magnetizationNAGAI HIDE·Filed 2011·Granted Jul 2, 2013·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →