Inventor · disambiguated record
Jie Yu
Also filed as: YU JIE · YU JIE-MING
17 granted patents·8 pending applications·578 citations·filing 1999–2022
95Inventor score
Files withCHARTERED SEMICONDUCTOR MFG9SEAGATE TECHNOLOGY LLC5UNIV PEKING FOUNDER GROUP CO4BAOSHAN IRON & STEEL3INST OF MICROELECTRONICS CAS2
Top patents by PatentIndex Score
25 records- 0193US6277683B1Method of forming a sidewall spacer and a salicide blocking shape, using only one silicon nitride layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 21, 2001·98 cites·25 claims
- 0289US6565718B1Magnetic recording medium with high density, thin dual carbon overcoatsSEAGATE TECHNOLOGY LLC·Filed 2001·Granted May 20, 2003·25 cites·14 claims
- 0389US6303214B1Magnetic recording medium with high density thin dual carbon overcoatsSEAGATE TECHNOLOGY LLC·Filed 2000·Granted Oct 16, 2001·24 cites·6 claims
- 0488US6277700B1High selective nitride spacer etch with high ratio of spacer width to deposited nitride thicknessCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 21, 2001·52 cites·17 claims
- 0587US6355581B1Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capabilityCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 12, 2002·52 cites·17 claims
- 0687US6316304B1Method of forming spacers of multiple widthsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Nov 13, 2001·60 cites·27 claims
- 0781US6572958B1Magnetic recording media comprising a silicon carbide corrosion barrier layer and a c-overcoatSEAGATE TECHNOLOGY LLC·Filed 2000·Granted Jun 3, 2003·15 cites·20 claims
- 0879US6251764B1Method to form an L-shaped silicon nitride sidewall spacerCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jun 26, 2001·60 cites·20 claims
- 0979US6211008B1Method for forming high-density high-capacity capacitorCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 3, 2001·27 cites·20 claims
- 1078US6228713B1Self-aligned floating gate for memory application using shallow trench isolationCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·64 cites·15 claims
- 1178US6156598AMethod for forming a lightly doped source and drain structure using an L-shaped spacerCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 5, 2000·51 cites·15 claims
- 1276US6468405B1Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zoneSEAGATE TECHNOLOGY LLC·Filed 2000·Granted Oct 22, 2002·13 cites·20 claims
- 1374US6569294B1Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zoneSEAGATE TECHNOLOGY LLC·Filed 2001·Granted May 27, 2003·12 cites·19 claims
- 1459US6294480B1Method for forming an L-shaped spacer with a disposable organic top coatingCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Sep 25, 2001·24 cites·17 claims
- 1556US9988857B2Method for manufacturing superior 13Cr friction-welded drillrodBAOSHAN IRON & STEEL·Filed 2013·Granted Jun 5, 2018·1 cites·10 claims
- 1653US11162150B2Method for manufacturing superior 13Cr tool couplerBAOSHAN IRON & STEEL·Filed 2013·Granted Nov 2, 2021·0 cites·4 claims
- 1752US10227828B2Ultra-high toughness and high strength drill pipe and manufacturing process thereofBAOSHAN IRON & STEEL·Filed 2013·Granted Mar 12, 2019·0 cites·11 claims
- 1846US2016230247A1Non quenched and tempered steel and manufacturing process thereofUNIV PEKING FOUNDER GROUP CO·Filed 2013·Application pending·0 cites
- 1946US2016215358A1Non quenched and tempered steel and manufacturing process thereofUNIV PEKING FOUNDER GROUP CO·Filed 2013·Application pending·0 cites
- 2046US2016208358A1Non quenched and tempered steel and manufacturing process thereofUNIV PEKING FOUNDER GROUP CO·Filed 2013·Application pending·0 cites
- 2146US2016208356A1Non quenched and tempered steel and manufacturing process thereofUNIV PEKING FOUNDER GROUP CO·Filed 2013·Application pending·0 cites
- 2244US2024260488A1Method for preparing reservoir elementINST OF MICROELECTRONICS CAS·Filed 2022·Application pending·0 cites
- 2342US2024130251A1Three-dimensional reservoir based on volatile three-dimensional memristor and manufacturing method thereforINST OF MICROELECTRONICS CAS·Filed 2022·Application pending·0 cites
- 2432US2003092281A1Method for organic barc and photoresist trimming processCHARTERED SEMICONDUCTORS MANUF·Filed 2001·Application pending·0 cites
- 2531US2015128036A1Method, apparatus and electronic device for moving target elementTENCENT TECH SHENZHEN CO LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →