Inventor · disambiguated record
Yoshiharu Anda
Also filed as: ANDA YOSHIHARU
20 granted patents·9 pending applications·130 citations·filing 1998–2020
93Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD14PANASONIC CORP12PANASONIC IP MAN CO LTD2UMEDA HIDEKAZU1
Top patents by PatentIndex Score
29 records- 0187US7829957B2Semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2008·Granted Nov 9, 2010·14 cites·9 claims
- 0284US11342428B2Semiconductor devicePANASONIC CORP·Filed 2020·Granted May 24, 2022·2 cites·14 claims
- 0378US9666664B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2015·Granted May 30, 2017·3 cites·17 claims
- 0475US8872227B2Nitride semiconductor deviceUMEDA HIDEKAZU·Filed 2012·Granted Oct 28, 2014·4 cites·22 claims
- 0575US8791505B2Semiconductor devicePANASONIC CORP·Filed 2013·Granted Jul 29, 2014·4 cites·13 claims
- 0673US6570464B1High frequency apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted May 27, 2003·9 cites·25 claims
- 0771US7144765B2Semiconductor device with Schottky electrode including lanthanum and boron, and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Dec 5, 2006·4 cites·10 claims
- 0871US6548838B1Field-effect transistor, bipolar transistor, and methods of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 15, 2003·17 cites·8 claims
- 0971US6051454ASemiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 18, 2000·34 cites·6 claims
- 1062US9842905B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2013·Granted Dec 12, 2017·1 cites·3 claims
- 1162US7495268B2Semiconductor device and manufacturing method of the samePANASONIC CORP·Filed 2007·Granted Feb 24, 2009·2 cites·7 claims
- 1256US6329227B2Method of patterning organic polymer film and method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Dec 11, 2001·5 cites·15 claims
- 1355US6153499AMethod of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Nov 28, 2000·20 cites·12 claims
- 1454US7199014B2Field effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 3, 2007·6 cites·4 claims
- 1552US6967360B2Pseudomorphic high electron mobility transistor with Schottky electrode including lanthanum and boron, and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 22, 2005·4 cites·4 claims
- 1644US9082884B2Schottky diodePANASONIC CORP·Filed 2013·Granted Jul 14, 2015·0 cites·5 claims
- 1744US2009309134A1Semiconductor device and method of manufacturing the samePANASONIC CORP·Filed 2009·Application pending·0 cites
- 1844US2009230482A1Semiconductor device and manufacturing method thereofPANASONIC CORP·Filed 2009·Application pending·0 cites
- 1943US8866231B2Nitride semiconductor devicePANASONIC CORP·Filed 2014·Granted Oct 21, 2014·0 cites·12 claims
- 2042US9583608B2Nitride semiconductor device and method for manufacturing nitride semiconductor devicePANASONIC IP MAN CO LTD·Filed 2013·Granted Feb 28, 2017·0 cites·15 claims
- 2141US2006273396A1Semiconductor device and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 2240US8890210B2Field effect transistorPANASONIC CORP·Filed 2012·Granted Nov 18, 2014·0 cites·11 claims
- 2340US2004041653A1High Frequency ApparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Application pending·0 cites
- 2439US2006237753A1Semiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 2539US2013146946A1Semiconductor device and method for fabricating samePANASONIC CORP·Filed 2013·Application pending·0 cites
- 2638US2006076585A1Semiconductor resistor and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 2738US2006281237A1Method of manufacturing junction field effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 2837US2011227132A1Field-effect transistorPANASONIC CORP·Filed 2011·Application pending·0 cites
- 2931US6300190B1Method for fabricating semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 9, 2001·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →