Inventor · disambiguated record
Matthew T. Currie
Also filed as: CURRIE MATTHEW · CURRIE MATTHEW T
98 granted patents·17 pending applications·3,535 citations·filing 2001–2018
99Inventor score
Files withAMBERWAVE SYSTEMS CORP60TAIWAN SEMICONDUCTOR MFG25TAIWAN SEMICONDUCTOR MFG CO LTD12CURRIE MATTHEW T5BRAITHWAITE GLYN2
Top patents by PatentIndex Score
115 records- 0199US7420201B2Strained-semiconductor-on-insulator device structures with elevated source/drain regionsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 2, 2008·80 cites·25 claims
- 0299US7109516B2Strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 19, 2006·100 cites·15 claims
- 0399US7074623B2Methods of forming strained-semiconductor-on-insulator finFET device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 11, 2006·226 cites·6 claims
- 0499US6995430B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Feb 7, 2006·485 cites·14 claims
- 0599US6960781B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Nov 1, 2005·223 cites·40 claims
- 0699US6831292B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Dec 14, 2004·361 cites·62 claims
- 0798US8629477B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 14, 2014·35 cites·20 claims
- 0898US8324660B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationLOCHTEFELD ANTHONY J·Filed 2010·Granted Dec 4, 2012·85 cites·24 claims
- 0998US8183627B2Hybrid fin field-effect transistor structures and related methodsCURRIE MATTHEW T·Filed 2008·Granted May 22, 2012·252 cites·15 claims
- 1098US7709828B2RF circuits including transistors having strained material layersTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 4, 2010·138 cites·19 claims
- 1198US7638842B2Lattice-mismatched semiconductor structures on insulatorsAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 29, 2009·81 cites·41 claims
- 1298US7626246B2Solutions for integrated circuit integration of alternative active area materialsAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Dec 1, 2009·121 cites·14 claims
- 1398US7335545B2Control of strain in device layers by prevention of relaxationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Feb 26, 2008·118 cites·31 claims
- 1498US7307273B2Control of strain in device layers by selective relaxationAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Dec 11, 2007·86 cites·17 claims
- 1597US7504704B2Shallow trench isolation processAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Mar 17, 2009·54 cites·22 claims
- 1697US7217603B2Methods of forming reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted May 15, 2007·41 cites·42 claims
- 1797US7049627B2Semiconductor heterostructures and related methodsAMBERWAVE SYSTEMS CORP·Filed 2003·Granted May 23, 2006·102 cites·21 claims
- 1897US6900094B2Method of selective removal of SiGe alloysAMBERWAVE SYSTEMS CORP·Filed 2002·Granted May 31, 2005·130 cites·13 claims
- 1997US6583015B2Gate technology for strained surface channel and strained buried channel MOSFET devicesAMBERWAVE SYSTEMS CORP·Filed 2001·Granted Jun 24, 2003·152 cites·25 claims
- 2096US8796734B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 5, 2014·16 cites·20 claims
- 2196US8519436B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 27, 2013·17 cites·20 claims
- 2296US7829442B2Semiconductor heterostructures having reduced dislocation pile-ups and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 9, 2010·26 cites·16 claims
- 2395US7838392B2Methods for forming III-V semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Nov 23, 2010·17 cites·14 claims
- 2495US7588994B2Methods for forming strained-semiconductor-on-insulator device structures by mechanically inducing strainAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Sep 15, 2009·17 cites·24 claims
- 2595US7259388B2Strained-semiconductor-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 21, 2007·18 cites·18 claims
- 2694US8026534B2III-V semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Sep 27, 2011·10 cites·20 claims
- 2794US7393733B2Methods of forming hybrid fin field-effect transistor structuresAMBERWAVE SYSTEMS CORP·Filed 2004·Granted Jul 1, 2008·58 cites·9 claims
- 2894US7297612B2Methods for forming strained-semiconductor-on-insulator device structures by use of cleave planesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Nov 20, 2007·16 cites·16 claims
- 2993US9431243B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·5 cites·21 claims
- 3093US9064930B2Methods for forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·7 cites·20 claims
- 3193US7566606B2Methods of fabricating semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2006·Granted Jul 28, 2009·19 cites·16 claims
- 3293US7138310B2Semiconductor devices having strained dual channel layersAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Nov 21, 2006·60 cites·13 claims
- 3392US7432139B2Methods for forming dielectrics and metal electrodesAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Oct 7, 2008·18 cites·29 claims
- 3492US6991972B2Gate material for semiconductor device fabricationAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jan 31, 2006·49 cites·50 claims
- 3591US8586452B2Methods for forming semiconductor device structuresLOCHTEFELD ANTHONY J·Filed 2011·Granted Nov 19, 2013·6 cites·19 claims
- 3690US6982474B2Reacted conductive gate electrodesAMBERWAVE SYSTEMS CORP·Filed 2002·Granted Jan 3, 2006·28 cites·15 claims
- 3789US9293582B2Hybrid fin field-effect transistor structures and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·4 cites·20 claims
- 3889US7776697B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 17, 2010·9 cites·19 claims
- 3988US7071014B2Methods for preserving strained semiconductor substrate layers during CMOS processingAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jul 4, 2006·27 cites·44 claims
- 4087US9219112B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Dec 22, 2015·3 cites·21 claims
- 4187US8748292B2Methods of forming strained-semiconductor-on-insulator device structuresLANGDO THOMAS A·Filed 2005·Granted Jun 10, 2014·12 cites·20 claims
- 4286US9601623B2Methods for forming semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·2 cites·20 claims
- 4385US8987028B2Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 24, 2015·3 cites·20 claims
- 4485US7060632B2Methods for fabricating strained layers on semiconductor substratesAMBERWAVE SYSTEMS CORP·Filed 2003·Granted Jun 13, 2006·27 cites·54 claims
- 4584US9018055B2Hybrid fin field-effect transistor structures and related methodsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 28, 2015·4 cites·19 claims
- 4684US7414259B2Strained germanium-on-insulator device structuresAMBERWAVE SYSTEMS CORP·Filed 2005·Granted Aug 19, 2008·4 cites·13 claims
- 4783US8809835B2RF circuits including transistors having strained material layersBRAITHWAITE GLYN·Filed 2012·Granted Aug 19, 2014·5 cites·19 claims
- 4883US7846802B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Dec 7, 2010·5 cites·26 claims
- 4983US6891209B2Dynamic random access memory trench capacitorsAMBERWAVE SYSTEMS CORP·Filed 2002·Granted May 10, 2005·19 cites·14 claims
- 5082US8344355B2Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating sameTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 1, 2013·3 cites·18 claims
Showing the top 50 of 115 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →