Inventor · disambiguated record
Akihisa Terano
Also filed as: TERANO AKIHISA
16 granted patents·5 pending applications·94 citations·filing 1988–2014
90Inventor score
Files withOPNEXT JAPAN INC6HITACHI LTD5TERANO AKIHISA3AGENCY IND SCIENCE TECHN1HITACHI MEDIA ELECTRON KK1
Top patents by PatentIndex Score
21 records- 0192US7242273B2RF-MEMS switch and its fabrication methodHITACHI MEDIA ELECTRON KK·Filed 2004·Granted Jul 10, 2007·49 cites·8 claims
- 0281US8710550B2Semiconductor device with hetero-junction bodiesHITACHI LTD·Filed 2012·Granted Apr 29, 2014·6 cites·11 claims
- 0372US8896027B2Nitride semiconductor diodeHITACHI LTD·Filed 2012·Granted Nov 25, 2014·3 cites·10 claims
- 0471US6670600B2Semiconductor photodetector with ohmic contact areas formed to prevent incident light from resolving the areas, semiconductor photo receiver and semiconductor device installed with the semiconductor photodetectorHITACHI LTD·Filed 2001·Granted Dec 30, 2003·14 cites·20 claims
- 0567US9530858B2Nitride semiconductor device and method of manufacturing the sameSUMITOMO CHEMICAL CO·Filed 2014·Granted Dec 27, 2016·2 cites·16 claims
- 0666US8124432B2Nitride semiconductor optical element and manufacturing method thereofTSUCHIYA TOMONOBU·Filed 2009·Granted Feb 28, 2012·4 cites·9 claims
- 0764US7596160B2Nitride semiconductor lasers and its manufacturing methodOPNEXT JAPAN INC·Filed 2007·Granted Sep 29, 2009·2 cites·14 claims
- 0864US7364929B2Nitride semiconductor based light-emitting device and manufacturing method thereofOPNEXT JAPAN INC·Filed 2006·Granted Apr 29, 2008·2 cites·16 claims
- 0948US2005186117A1Gas detecting method and gas sensorsFiled 2004·Application pending·0 cites
- 1047US7822088B2Nitride semiconductor light emitting device and method for manufacturing the sameOPNEXT JAPAN INC·Filed 2008·Granted Oct 26, 2010·0 cites·13 claims
- 1147US2009206360A1Nitride semiconductor light emitting device and method of manufacturing the sameOPNEXT JAPAN INC·Filed 2008·Application pending·0 cites
- 1245US9059328B2Nitride semiconductor element and method of manufacturing the sameHITACHI METALS LTD·Filed 2013·Granted Jun 16, 2015·0 cites·15 claims
- 1345US8686442B2Nitride semiconductor light emitting device and method of manufacturing the sameTERANO AKIHISA·Filed 2012·Granted Apr 1, 2014·0 cites·10 claims
- 1443US7738521B2Semiconductor laser deviceOPNEXT JAPAN INC·Filed 2006·Granted Jun 15, 2010·0 cites·10 claims
- 1542US8000364B2Nitride semiconductor light emitting device and method of manufacturing the sameOPNEXT JAPAN INC·Filed 2008·Granted Aug 16, 2011·0 cites·18 claims
- 1640US4902635AMethod for production of compound semicondutor devicesAGENCY IND SCIENCE TECHN·Filed 1988·Granted Feb 20, 1990·12 cites·15 claims
- 1740US2016013327A1Nitride semiconductor diodeHITACHI LTD·Filed 2013·Application pending·0 cites
- 1837US8598594B2Semiconductor device and its fabrication methodMOCHIZUKI KAZUHIRO·Filed 2012·Granted Dec 3, 2013·0 cites·16 claims
- 1937US8476731B2Nitride semiconductor diodeTERANO AKIHISA·Filed 2012·Granted Jul 2, 2013·0 cites·17 claims
- 2034US2003132496A1Compound semiconductor device, method for producing thereof and high frequency module using thereofHITACHI LTD·Filed 2002·Application pending·0 cites
- 2132US2007278075A1Capacitance Type Mems Device, Manufacturing Method Thereof, And High Frequency DeviceTERANO AKIHISA·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →