Inventor · disambiguated record
Tung-Yang Lin
Also filed as: LIN TUNG-YANG
15 granted patents·4 pending applications·7 citations·filing 2013–2024
86Inventor score
Top patents by PatentIndex Score
19 records- 0188US9000517B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 7, 2015·6 cites·20 claims
- 0277US2024321894A1Breakdown voltage capability of high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0376US12027526B2Breakdown voltage capability of high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 0470US9356139B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·1 cites·20 claims
- 0569US11508757B2Breakdown voltage capability of high voltage deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 22, 2022·0 cites·20 claims
- 0665US12230709B2Transistor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims
- 0760US2025338582A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0860US2025366191A1Semiconductor isolation structure for injection suppression and method of making thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0959US10038090B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·0 cites·20 claims
- 1058US2025212431A1Semiconductor device for high-voltage applicationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1157US9601616B2Power MOSFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·0 cites·20 claims
- 1254US11532701B2Semiconductor isolation structure and method for making the semiconductor isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 1351US9865748B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·0 cites·20 claims
- 1450US11456380B2Transistor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 27, 2022·0 cites·20 claims
- 1550US9627551B2Ultrahigh-voltage semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·0 cites·20 claims
- 1649US9379179B2Ultra high voltage electrostatic discharge protection device with current gainTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 28, 2016·0 cites·20 claims
- 1748US10014288B2Ultra high voltage electrostatic discharge protection device with current gainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 3, 2018·0 cites·20 claims
- 1847US9431531B2Semiconductor device having drain side contact through buried oxideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 30, 2016·0 cites·20 claims
- 1946US9412863B2Enhanced breakdown voltages for high voltage MOSFETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →