Inventor · disambiguated record
Te-Sheng Chao
Also filed as: CHAO TE-SHENG
9 granted patents·2 pending applications·56 citations·filing 2006–2009
85Inventor score
Top patents by PatentIndex Score
11 records- 0186US7660147B2Programming method for phase change memoryIND TECH RES INST·Filed 2007·Granted Feb 9, 2010·22 cites·20 claims
- 0278US7626191B2Lateral phase change memory with spacer electrodesIND TECH RES INST·Filed 2006·Granted Dec 1, 2009·10 cites·8 claims
- 0372US7835177B2Phase change memory cell and method of fabricatingIND TECH RES INST·Filed 2006·Granted Nov 16, 2010·6 cites·9 claims
- 0471US7773409B2Writing method and system for a phase change memoryIND TECH RES INST·Filed 2007·Granted Aug 10, 2010·9 cites·32 claims
- 0562US7679075B2Phase change memory array and fabrication thereofIND TECH RES INST·Filed 2008·Granted Mar 16, 2010·7 cites·20 claims
- 0659US7598113B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2006·Granted Oct 6, 2009·1 cites·15 claims
- 0754US7868314B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2009·Granted Jan 11, 2011·0 cites·12 claims
- 0844US2007291533A1Phase change memory device and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 0941US8045367B2Phase change memoryNANYA TECHNOLOGY CORP·Filed 2008·Granted Oct 25, 2011·1 cites·10 claims
- 1036US8058702B2Phase change memory cellCHAO TE-SHENG·Filed 2006·Granted Nov 15, 2011·0 cites·8 claims
- 1136US2007148862A1Phase-change memory layer and method of manufacturing the same and phase-change memory cellCHEN YI-CHAN·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →