Inventor · disambiguated record
Masayuki Imaizumi
Also filed as: IMAIZUMI MASAYUKI
38 granted patents·2 pending applications·208 citations·filing 2004–2019
97Inventor score
Top patents by PatentIndex Score
40 records- 0195US7708029B2Coupling member of pipe couplingNITTO KOHKI CO·Filed 2007·Granted May 4, 2010·39 cites·1 claims
- 0291US9741797B2Insulated gate silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 22, 2017·10 cites·13 claims
- 0391US8785931B2Semiconductor deviceKINOUCHI SHINICHI·Filed 2011·Granted Jul 22, 2014·23 cites·18 claims
- 0490US10510843B2Insulated gate silicon carbide semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Dec 17, 2019·5 cites·26 claims
- 0589US9006819B2Power semiconductor device and method for manufacturing sameHINO SHIRO·Filed 2011·Granted Apr 14, 2015·14 cites·18 claims
- 0688US9214458B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Dec 15, 2015·9 cites·30 claims
- 0787US8222649B2Semiconductor device and method of manufacturing the sameMIURA NARUHISA·Filed 2006·Granted Jul 17, 2012·18 cites·9 claims
- 0886US7285465B2Method of manufacturing a SiC vertical MOSFETMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Oct 23, 2007·10 cites·4 claims
- 0982US9425261B2Silicon-carbide semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Aug 23, 2016·5 cites·12 claims
- 1079US9577086B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Feb 21, 2017·5 cites·14 claims
- 1179US8680538B2Silicon carbide semiconductor deviceTARUI YOICHIRO·Filed 2008·Granted Mar 25, 2014·8 cites·8 claims
- 1278US9614029B2Trench-gate type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Apr 4, 2017·2 cites·16 claims
- 1378US9224860B2Trench-gate type semiconductor device and manufacturing method thereforKAGAWA YASUHIRO·Filed 2011·Granted Dec 29, 2015·5 cites·17 claims
- 1477US9515145B2Vertical MOSFET device with steady on-resistanceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Dec 6, 2016·5 cites·24 claims
- 1576US9093361B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Jul 28, 2015·5 cites·12 claims
- 1676US8723259B2Silicon carbide semiconductor deviceNAKAO YUKIYASU·Filed 2010·Granted May 13, 2014·4 cites·6 claims
- 1775US10418444B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Sep 17, 2019·2 cites·9 claims
- 1872US11389126B2Gantry housing, and medical apparatusGEN ELECTRIC·Filed 2019·Granted Jul 19, 2022·2 cites·12 claims
- 1972US9184307B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Nov 10, 2015·3 cites·15 claims
- 2071US9985093B2Trench-gate type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2017·Granted May 29, 2018·1 cites·11 claims
- 2170US8304901B2Semiconductor device having a groove and a junction termination extension layer surrounding a guard ring layerWATANABE HIROSHI·Filed 2009·Granted Nov 6, 2012·4 cites·9 claims
- 2269US9525057B2Semiconductor deviceMIURA NARUHISA·Filed 2013·Granted Dec 20, 2016·2 cites·17 claims
- 2367US9496344B2Semiconductor device including well regions with different impurity densitiesTANAKA RINA·Filed 2013·Granted Nov 15, 2016·3 cites·9 claims
- 2467US9111751B2Silicon carbide semiconductor device and method of fabricating sameFURUKAWA AKIHIKO·Filed 2011·Granted Aug 18, 2015·2 cites·6 claims
- 2567US8093598B2Power semiconductor deviceOHTSUKA KENICHI·Filed 2007·Granted Jan 10, 2012·2 cites·7 claims
- 2665US7928469B2MOSFET and method for manufacturing MOSFETMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Apr 19, 2011·2 cites·14 claims
- 2764US8969960B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2012·Granted Mar 3, 2015·2 cites·4 claims
- 2863US10886372B2Silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jan 5, 2021·0 cites·6 claims
- 2963US9337271B2Silicon-carbide semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2013·Granted May 10, 2016·1 cites·11 claims
- 3063US9293572B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2010·Granted Mar 22, 2016·2 cites·16 claims
- 3163US8679952B2Method of manufacturing silicon carbide epitaxial waferTOMITA NOBUYUKI·Filed 2011·Granted Mar 25, 2014·2 cites·20 claims
- 3262US7029969B2Method of manufacture of a silicon carbide MOSFET including a masking with a tapered shape and implanting ions at an angleMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Apr 18, 2006·7 cites·8 claims
- 3360US8026160B2Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Sep 27, 2011·2 cites·10 claims
- 3458US10304939B2SiC semiconductor device having pn junction interface and method for manufacturing the SiC semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 28, 2019·0 cites·2 claims
- 3556US8252672B2Silicon carbide semiconductor device comprising silicon carbide layer and method of manufacturing the sameWATANABE TOMOKATSU·Filed 2008·Granted Aug 28, 2012·1 cites·6 claims
- 3655US8753951B2Method for manufacturing silicon carbide semiconductor deviceTANIOKA TOSHIKAZU·Filed 2010·Granted Jun 17, 2014·1 cites·18 claims
- 3755US2019237558A1Sic semiconductor device having pn junction interface and method for manufacturing the sic semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Application pending·0 cites
- 3848US2012074508A1Power semiconductor deviceOHTSUKA KENICHI·Filed 2011·Application pending·0 cites
- 3945US9954072B2Silicon-carbide semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Apr 24, 2018·0 cites·12 claims
- 4043US9362391B2Silicon carbide semiconductor device and method of manufacturing the sameTARUI YOICHIRO·Filed 2011·Granted Jun 7, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →