Inventor · disambiguated record
David C. Gilmer
Also filed as: GILMER DAVID · GILMER DAVID C · GILMER DAVID CHRISTOPHER
13 granted patents·6 pending applications·519 citations·filing 2000–2010
93Inventor score
Top patents by PatentIndex Score
19 records- 0197US6348386B1Method for making a hafnium-based insulating filmMOTOROLA INC·Filed 2001·Granted Feb 19, 2002·272 cites·25 claims
- 0291US6787421B2Method for forming a dual gate oxide device using a metal oxide and resulting deviceFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Sep 7, 2004·59 cites·19 claims
- 0390US7015153B1Method for forming a layer using a purging gas in a semiconductor processFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Mar 21, 2006·56 cites·19 claims
- 0489US6717226B2Transistor with layered high-K gate dielectric and method thereforMOTOROLA INC·Filed 2002·Granted Apr 6, 2004·52 cites·7 claims
- 0587US7655550B2Method of making metal gate transistorsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 2, 2010·14 cites·19 claims
- 0681US6573160B2Method of recrystallizing an amorphous region of a semiconductorMOTOROLA INC·Filed 2000·Granted Jun 3, 2003·30 cites·21 claims
- 0779US7297588B2Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Nov 20, 2007·7 cites·20 claims
- 0875US7432164B2Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 7, 2008·6 cites·17 claims
- 0973US6972224B2Method for fabricating dual-metal gate deviceFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Dec 6, 2005·16 cites·11 claims
- 1064US8432020B2Capacitors, systems, and methodsPARK CHANRO·Filed 2010·Granted Apr 30, 2013·3 cites·20 claims
- 1164US7868389B2Electronic device comprising a gate electrode including a metal-containing layer having one or more impuritiesFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jan 11, 2011·2 cites·20 claims
- 1258US7683439B2Semiconductor device having a metal carbide gate with an electropositive element and a method of making the sameFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 23, 2010·1 cites·9 claims
- 1350US8178401B2Method for fabricating dual-metal gate deviceGILMER DAVID C·Filed 2006·Granted May 15, 2012·1 cites·10 claims
- 1441US2006234436A1Method of forming a semiconductor device having a high-k dielectricTSENG HSING H·Filed 2005·Application pending·0 cites
- 1540US2006094259A1Forming gas anneal process for high dielectric constant gate dielectrics in a semiconductor fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 1638US2007284677A1Metal oxynitride gateCHANG WENG·Filed 2007·Application pending·0 cites
- 1738US2005282326A1Method for fabricating dual-metal gate deviceGILMER DAVID C·Filed 2005·Application pending·0 cites
- 1836US2009286387A1Modulation of Tantalum-Based Electrode WorkfunctionGILMER DAVID C·Filed 2008·Application pending·0 cites
- 1935US2005136633A1Blocking layer for silicide uniformity in a semiconductor transistorFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →