Inventor · disambiguated record
Yukio Takano
Also filed as: TAKANO YUKIO
13 granted patents·2 pending applications·157 citations·filing 1979–2009
91Inventor score
Top patents by PatentIndex Score
15 records- 0188US4276114ASemiconductor substrate and a manufacturing method thereofHITACHI LTD·Filed 1979·Granted Jun 30, 1981·54 cites·11 claims
- 0284US4770966AElectrophotographic photosensitive material comprising amorphous carbon protective layer containing hydrogen and fluorineFUJI ELECTRIC CO LTD·Filed 1987·Granted Sep 13, 1988·26 cites·2 claims
- 0380US4916720AX-ray analyzerHORIBA LTD·Filed 1988·Granted Apr 10, 1990·42 cites·14 claims
- 0459US2010004275A1Agent for suppressing development of tolerance to narcotic analgesicsUNIV KYOTO·Filed 2009·Application pending·0 cites
- 0550US2008227802A1Agent For Suppressing Development of Tolerance to Narcotic AnalgesicsUNIV KYOTO·Filed 2005·Application pending·0 cites
- 0648US4837137AElectrophotographic photoreceptorFUJI ELECTRIC CO LTD·Filed 1987·Granted Jun 6, 1989·7 cites·4 claims
- 0746US4833055AElectrophotographic photoreceptor comprising amorphous silicon and amorphous carbon buffer layerFUJI ELECTRIC CO LTD·Filed 1987·Granted May 23, 1989·6 cites·6 claims
- 0842US6733875B1Porous member and method of manufacturing the sameTOTO LTD·Filed 1994·Granted May 11, 2004·12 cites·12 claims
- 0938US6815741B2III-V single crystal as well as method of producing the same, and semiconductor device utilizing the III-V single crystalRENESAS TECH CORP·Filed 2003·Granted Nov 9, 2004·0 cites·4 claims
- 1037US6630697B2GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystalHITACHI LTD·Filed 2001·Granted Oct 7, 2003·0 cites·4 claims
- 1135US5770873AGaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystalHITACHI LTD·Filed 1995·Granted Jun 23, 1998·3 cites·3 claims
- 1233US6294804B1GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystalHITACHI LTD·Filed 1997·Granted Sep 25, 2001·2 cites·2 claims
- 1329US6297523B1GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the sameHITACHI LTD·Filed 1993·Granted Oct 2, 2001·1 cites·5 claims
- 1429US5733805AMethod of fabricating semiconductor device utilizing a GaAs single crystalHITACHI LTD·Filed 1995·Granted Mar 31, 1998·0 cites·4 claims
- 1525US4977307AApparatus for heating sample within vacuum chamberHORIBA LTD·Filed 1989·Granted Dec 11, 1990·4 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →