Inventor · disambiguated record
Toshiyuki Mine
Also filed as: MINE TOSHIYUKI
83 granted patents·20 pending applications·1,328 citations·filing 1988–2023
99Inventor score
Files withHITACHI LTD39RENESAS TECH CORP29RENESAS ELECTRONICS CORP8MINE TOSHIYUKI4HITACHI ULSI SYS CO LTD3
Top patents by PatentIndex Score
103 records- 0196US7772053B2Method for fabrication of semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Aug 10, 2010·48 cites·8 claims
- 0296US6576943B1Semiconductor device for reducing leak currents and controlling a threshold voltage and using a thin channel structureHITACHI LTD·Filed 2000·Granted Jun 10, 2003·96 cites·28 claims
- 0395US7947596B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2006·Granted May 24, 2011·36 cites·8 claims
- 0494US8169819B2Semiconductor storage deviceSHIMA AKIO·Filed 2010·Granted May 1, 2012·28 cites·12 claims
- 0594US7528036B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2005·Granted May 5, 2009·18 cites·18 claims
- 0693US6876023B2Gain cell type non-volatile memory having charge accumulating region charged or discharged by channel current from a thin film channel pathHITACHI LTD·Filed 2002·Granted Apr 5, 2005·63 cites·3 claims
- 0792US8427865B2Semiconductor storage deviceSHIMA AKIO·Filed 2012·Granted Apr 23, 2013·16 cites·5 claims
- 0892US6461916B1Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making the deviceHITACHI LTD·Filed 1998·Granted Oct 8, 2002·67 cites·50 claims
- 0992US6211531B1Controllable conduction deviceHITACHI LTD·Filed 2000·Granted Apr 3, 2001·63 cites·25 claims
- 1092US6040605ASemiconductor memory deviceHITACHI LTD·Filed 1999·Granted Mar 21, 2000·85 cites·34 claims
- 1191US7375399B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted May 20, 2008·22 cites·19 claims
- 1291US6444554B1Method of making a non-volatile memory and semiconductor deviceHITACHI LTD·Filed 2001·Granted Sep 3, 2002·36 cites·9 claims
- 1390US7109072B2Semiconductor material, field effect transistor and manufacturing method thereofHITACHI LTD·Filed 2005·Granted Sep 19, 2006·19 cites·4 claims
- 1490US6060723AControllable conduction deviceHITACHI LTD·Filed 1998·Granted May 9, 2000·69 cites·26 claims
- 1589US5091761ASemiconductor device having an arrangement of IGFETs and capacitors stacked thereoverHITACHI LTD·Filed 1989·Granted Feb 25, 1992·70 cites·42 claims
- 1688US6833582B2Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2004·Granted Dec 21, 2004·52 cites·20 claims
- 1788US6521943B1Semiconductor device having thin electrode layer adjacent gate insulator and method of manufactureHITACHI LTD·Filed 2000·Granted Feb 18, 2003·37 cites·23 claims
- 1887US7692234B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2007·Granted Apr 6, 2010·8 cites·11 claims
- 1986US10852209B2Water leak sensing system and methodHITACHI LTD·Filed 2019·Granted Dec 1, 2020·3 cites·12 claims
- 2086US9214516B2Field effect silicon carbide transistorMINE TOSHIYUKI·Filed 2012·Granted Dec 15, 2015·8 cites·12 claims
- 2186US7115943B2Nonvolatile semiconductor memory device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Granted Oct 3, 2006·39 cites·7 claims
- 2286US4907046ASemiconductor device with multilayer silicon oxide silicon nitride dielectricHITACHI LTD·Filed 1988·Granted Mar 6, 1990·39 cites·10 claims
- 2384US8541768B2Semiconductor device having stacked structural bodies and method for manufacturing the sameSHIMA AKIO·Filed 2011·Granted Sep 24, 2013·10 cites·8 claims
- 2484US7582901B2Semiconductor device comprising metal insulator metal (MIM) capacitorHITACHI LTD·Filed 2005·Granted Sep 1, 2009·12 cites·7 claims
- 2583US8617078B2Ultrasonic transducer and ultrasonic diagnostic device using sameMACHIDA SHUNTARO·Filed 2011·Granted Dec 31, 2013·22 cites·19 claims
- 2682US6656804B2Semiconductor device and production method thereofHITACHI LTD·Filed 2001·Granted Dec 2, 2003·26 cites·3 claims
- 2780US8319274B2Semiconductor deviceHISAMOTO DIGH·Filed 2007·Granted Nov 27, 2012·9 cites·15 claims
- 2880US8125012B2Non-volatile memory device with a silicon nitride charge holding film having an excess of siliconMINE TOSHIYUKI·Filed 2006·Granted Feb 28, 2012·20 cites·5 claims
- 2980US7860258B2Electro-acoustic transducer deviceHITACHI LTD·Filed 2006·Granted Dec 28, 2010·13 cites·9 claims
- 3080US6144062ASemiconductor device having thin electrode layer adjacent gate insulator and method of manufactureHITACHI LTD·Filed 1998·Granted Nov 7, 2000·35 cites·2 claims
- 3179US7304345B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2005·Granted Dec 4, 2007·4 cites·10 claims
- 3276US8410543B2Semiconductor storage device and manufacturing method thereofYANAGI ITARU·Filed 2007·Granted Apr 2, 2013·6 cites·16 claims
- 3375US7969760B2Semiconductor memory device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2007·Granted Jun 28, 2011·5 cites·10 claims
- 3474US7122900B2Semiconductor device and method manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Oct 17, 2006·18 cites·3 claims
- 3573US6710383B2MISFET semiconductor device having a high dielectric constant insulating film with tapered end portionsRENESAS TECH CORP·Filed 2001·Granted Mar 23, 2004·13 cites·23 claims
- 3672US8063433B2Nonvolatile semiconductor memory deviceISHIMARU TETSUYA·Filed 2008·Granted Nov 22, 2011·5 cites·14 claims
- 3772US7682990B2Method of manufacturing nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2005·Granted Mar 23, 2010·5 cites·13 claims
- 3871US9318558B2MOS field effect transistorMINE TOSHIYUKI·Filed 2012·Granted Apr 19, 2016·3 cites·11 claims
- 3969US6417052B1Fabrication process for semiconductor deviceHITACHI LTD·Filed 2000·Granted Jul 9, 2002·14 cites·6 claims
- 4069US5846869AMethod of manufacturing semiconductor integrated circuit deviceHITACHI LTD·Filed 1996·Granted Dec 8, 1998·36 cites·10 claims
- 4166US12276573B2Water leakage position estimation system, water leakage position estimation method, and water leakage position estimation programHITACHI LTD·Filed 2021·Granted Apr 15, 2025·0 cites·12 claims
- 4265US7442989B2Nonvolatile semiconductor memory device and method of manufacturing thereofRENESAS TECH CORP·Filed 2003·Granted Oct 28, 2008·11 cites·20 claims
- 4365US7195976B2Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making deviceRENESAS TECH CORP·Filed 2004·Granted Mar 27, 2007·6 cites·46 claims
- 4465US6194759B1Semiconductor memory deviceHITACHI LTD·Filed 1999·Granted Feb 27, 2001·21 cites·3 claims
- 4564US7759720B2Non-volatile semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Jul 20, 2010·2 cites·10 claims
- 4664US7221056B2Semiconductor integrated circuit device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Granted May 22, 2007·11 cites·10 claims
- 4764US7199022B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Apr 3, 2007·18 cites·8 claims
- 4864US7196384B2Semiconductor device and method for manufacturing thereofHITACHI ULSI SYS CO LTD·Filed 2005·Granted Mar 27, 2007·1 cites·2 claims
- 4963US8106449B2Semiconductor deviceSANO TOSHIAKI·Filed 2006·Granted Jan 31, 2012·4 cites·14 claims
- 5063US7692233B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Granted Apr 6, 2010·1 cites·19 claims
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →