Inventor · disambiguated record

Takamichi Sumitomo

Also filed as: SUMITOMO TAKAMICHI

42 granted patents·15 pending applications·128 citations·filing 2009–2022

97Inventor score

Technology areasH01S H10P B82Y H10D C30B

Files withSUMITOMO ELECTRIC INDUSTRIES22 KYONO TAKASHI8 YOSHIZUMI YUSUKE8 ENYA YOHEI6 SUMITOMO TAKAMICHI4

Top patents by PatentIndex Score

57 records

0197US7933303B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Apr 26, 2011·30 cites·20 claims
0294US8227277B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jul 24, 2012·15 cites·9 claims
0392US8306082B2Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2010·Granted Nov 6, 2012·12 cites·16 claims
0492US7851821B2Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·9 cites·29 claims
0588US7858963B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 28, 2010·6 cites·11 claims
0687US8546163B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Oct 1, 2013·6 cites·10 claims
0786US8741674B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Jun 3, 2014·6 cites·10 claims
0884US8718110B2Nitride semiconductor laser and epitaxial substrateKYONO TAKASHI·Filed 2012·Granted May 6, 2014·6 cites·21 claims
0984US8053806B2Group III nitride semiconductor device and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Nov 8, 2011·4 cites·24 claims
1080US8507305B2Group-III nitride semiconductor laser device, method of fabricating group-III nitride semiconductor laser device, and epitaxial substrateYOSHIZUMI YUSUKE·Filed 2012·Granted Aug 13, 2013·4 cites·16 claims
1178US8927962B2Group III nitride semiconductor optical deviceUENO MASAKI·Filed 2010·Granted Jan 6, 2015·4 cites·18 claims
1275US8513684B2Nitride semiconductor light emitting deviceKYONO TAKASHI·Filed 2011·Granted Aug 20, 2013·3 cites·20 claims
1375US8207556B2Group III nitride semiconductor device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 26, 2012·2 cites·28 claims
1475US7851243B1Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Granted Dec 14, 2010·2 cites·1 claims
1574US8476615B2GaN-based semiconductor light emitting device and the method for making the sameENYA YOHEI·Filed 2011·Granted Jul 2, 2013·3 cites·18 claims
1673US8803274B2Nitride-based semiconductor light-emitting elementKYONO TAKASHI·Filed 2010·Granted Aug 12, 2014·3 cites·10 claims
1772US12470046B2Vertical cavity surface-emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Nov 11, 2025·0 cites·9 claims
1870US8357946B2Nitride semiconductor light emitting device, epitaxial substrate, and method for fabricating nitride semiconductor light emitting deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Granted Jan 22, 2013·2 cites·39 claims
1970US8207544B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2010·Granted Jun 26, 2012·2 cites·24 claims
2068US8483251B2Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diodeENYA YOHEI·Filed 2011·Granted Jul 9, 2013·2 cites·24 claims
2168US8067257B2Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceUENO MASAKI·Filed 2010·Granted Nov 29, 2011·1 cites·19 claims
2265US8953656B2III-nitride semiconductor laser device and method for fabricating III-nitride semiconductor laser deviceKYONO TAKASHI·Filed 2012·Granted Feb 10, 2015·1 cites·15 claims
2363US7955881B2Method of fabricating quantum well structureSUMITOMO ELECTRIC INDUSTRIES·Filed 2009·Granted Jun 7, 2011·1 cites·8 claims
2461US8809868B2Group-III nitride semiconductor device, method for fabricating Group-III nitride semiconductor device, and epitaxial substrateENYA YOHEI·Filed 2011·Granted Aug 19, 2014·1 cites·22 claims
2561US8183071B2Method for producing nitride semiconductor optical device and epitaxial waferAKITA KATSUSHI·Filed 2009·Granted May 22, 2012·1 cites·20 claims
2659US8548021B2III-nitride semiconductor laser, and method for fabricating III-nitride semiconductor laserFUJII KEI·Filed 2011·Granted Oct 1, 2013·1 cites·19 claims
2758US10938181B2Vertical cavity surface emitting laser and method for manufacturing vertical cavity surface emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Mar 2, 2021·0 cites·6 claims
2858US9231370B2Group III nitride semiconductor light emitting deviceSUMITOMO TAKAMICHI·Filed 2012·Granted Jan 5, 2016·1 cites·20 claims
2954US8304269B2Method of fabricating group III nitride semiconductor deviceKYONO TAKASHI·Filed 2011·Granted Nov 6, 2012·0 cites·14 claims
3053US2012080659A1Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting deviceUENO MASAKI·Filed 2011·Application pending·0 cites
3152US8693515B2Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2011·Granted Apr 8, 2014·0 cites·16 claims
3251US10594110B2Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Mar 17, 2020·0 cites·5 claims
3351US8541253B2III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Granted Sep 24, 2013·0 cites·11 claims
3450US8487327B2Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor deviceENYA YOHEI·Filed 2012·Granted Jul 16, 2013·0 cites·25 claims
3550US2012184057A1Iii-nitride semiconductor laser device, and method of fabricating the iii-nitride semiconductor laser deviceYOSHIZUMI YUSUKE·Filed 2012·Application pending·0 cites
3648US2011075695A1Iii-intride semiconductor laser device, and method of fabricating the iii-nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
3748US2011124142A1Gan semiconductor optical element, method for manufacturing gan semiconductor optical element, epitaxial wafer and method for growing gan semiconductor filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2011·Application pending·0 cites
3848US2011075694A1III-Nitride semiconductor laser device, and method of fabricating the III-Nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
3948US2011228804A1Group-iii nitride semiconductor laser device, and method for fabricating group-iii nitride semiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
4047US2010276663A1Gan semiconductor optical element, method for manufacturing gan semiconductor optical element, epitaxial wafer and method for growing gan semiconductor filmSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
4147US2019044306A1Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Application pending·0 cites
4247US2011158277A1Group-iii nitride semiconductor laser device, method of fabricating group-iii nitride semiconductor laser device, and epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
4344US2020028328A1Vertical cavity surface emitting laserSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Application pending·0 cites
4442US8923354B2Nitride semiconductor laser, epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Granted Dec 30, 2014·0 cites·24 claims
4542US8405066B2Nitride-based semiconductor light-emitting deviceKYONO TAKASHI·Filed 2010·Granted Mar 26, 2013·0 cites·7 claims
4642US2013285066A1Method of fabricating gallium nitride semiconductor, method of fabricating group iii nitride semiconductor device, and group iii nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
4741US2013009202A1Group iii nitride semiconductor device, method of fabricating group iii nitride semiconductor deviceSONY CORP·Filed 2012·Application pending·0 cites
4840US8748868B2Nitride semiconductor light emitting device and epitaxial substrateKYONO TAKASHI·Filed 2011·Granted Jun 10, 2014·0 cites·20 claims
4940US8619828B2Group III nitride semiconductor laser diodeAKITA KATSUSHI·Filed 2010·Granted Dec 31, 2013·0 cites·20 claims
5040US2012327967A1Group iii nitride semiconductor laser device, epitaxial substrate, method of fabricating group iii nitride semiconductor laser deviceENYA YOHEI·Filed 2012·Application pending·0 cites

Showing the top 50 of 57 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Takamichi Sumitomo files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →