Inventor · disambiguated record
Sang-Hyun Ban
Also filed as: BAN SANG HYUN
13 granted patents·1 pending application·17 citations·filing 2005–2020
86Inventor score
Top patents by PatentIndex Score
14 records- 0182US10115461B1Electronic device using resistive memory element and a recovery operation to compensate for threshold driftSK HYNIX INC·Filed 2017·Granted Oct 30, 2018·6 cites·12 claims
- 0277US10825519B1Electronic device and method of operating memory cell in the electronic deviceSK HYNIX INC·Filed 2019·Granted Nov 3, 2020·3 cites·20 claims
- 0373US10868249B2Chalcogenide material and electronic device including the sameSK HYNIX INC·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
- 0472US7368337B2Semiconductor device and manufacturing method thereofDONGBU ELECTRONICS CO LTD·Filed 2005·Granted May 6, 2008·5 cites·9 claims
- 0570US10783981B1Semiconductor memory capable of reducing an initial turn-on voltage of a memory cell using a stress pulse in a test mode, and method for driving the sameSK HYNIX INC·Filed 2018·Granted Sep 22, 2020·1 cites·15 claims
- 0662US11264095B2Electronic device and method of operating memory cell in the electronic deviceSK HYNIX INC·Filed 2020·Granted Mar 1, 2022·0 cites·17 claims
- 0760US11164654B2Method for driving an electronic device including a semiconductor memory in a test modeSK HYNIX INC·Filed 2020·Granted Nov 2, 2021·0 cites·9 claims
- 0858US11342043B2Electronic device for changing short-type defective memory cell to open-type defective memory cell by applying stress pulseSK HYNIX INC·Filed 2020·Granted May 24, 2022·0 cites·9 claims
- 0955US11707005B2Chalcogenide material, variable resistance memory device and electronic deviceSK HYNIX INC·Filed 2020·Granted Jul 18, 2023·0 cites·14 claims
- 1052US11443805B2Electronic device and method of operating memory cell in the electronic deviceSK HYNIX INC·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 1147US7893437B2Semiconductor device and manufacturing method thereofDONGBU ELECTRONICS CO LTD·Filed 2008·Granted Feb 22, 2011·0 cites·18 claims
- 1246US10685733B2Electronic device for changing short-type defective memory cell to open-type defective memory cell by applying stress pulseSK HYNIX INC·Filed 2017·Granted Jun 16, 2020·0 cites·10 claims
- 1340US7361597B2Semiconductor device and method of fabricating the sameDONGBU HITEK CO LTD·Filed 2006·Granted Apr 22, 2008·0 cites·15 claims
- 1438US2007155141A1Semiconductor device and method for fabricating the sameDONGBU ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →