Inventor · disambiguated record
Ravi Laxman
Also filed as: LAXMAN RAVI · LAXMAN RAVI K · LAXMAN RAVI KUMAR
28 granted patents·7 pending applications·1,597 citations·filing 1994–2016
98Inventor score
Files withADVANCED TECH MATERIALS10AIR PROD & CHEM6WANG ZIYUN4AIR LIQUIDE ELECTRONICS US LP3ENTEGRIS INC3
Top patents by PatentIndex Score
35 records- 0197US10465286B2Method and apparatus to help promote contact of gas with vaporized materialENTEGRIS INC·Filed 2016·Granted Nov 5, 2019·10 cites·16 claims
- 0297US9469898B2Method and apparatus to help promote contact of gas with vaporized materialENTEGRIS INC·Filed 2015·Granted Oct 18, 2016·10 cites·31 claims
- 0397US8444120B2Method and apparatus to help promote contact of gas with vaporized materialGREGG JOHN N·Filed 2012·Granted May 21, 2013·546 cites·2 claims
- 0497US6576345B1Dielectric films with low dielectric constantsNOVELLUS SYSTEMS INC·Filed 2000·Granted Jun 10, 2003·110 cites·45 claims
- 0597US6340628B1Method to deposit SiOCH films with dielectric constant below 3.0NOVELLUS SYSTEMS INC·Filed 2000·Granted Jan 22, 2002·166 cites·22 claims
- 0696US8128073B2Method and apparatus to help promote contact of gas with vaporized materialGREGG JOHN N·Filed 2010·Granted Mar 6, 2012·19 cites·11 claims
- 0796US7910765B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2010·Granted Mar 22, 2011·19 cites·20 claims
- 0896US7828274B2Method and apparatus to help promote contact of gas with vaporized materialADVANCED TECH MATERIALS·Filed 2009·Granted Nov 9, 2010·19 cites·17 claims
- 0996US7786320B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2009·Granted Aug 31, 2010·29 cites·7 claims
- 1095US7556244B2Method and apparatus to help promote contact of gas with vaporized materialADVANCED TECH MATERIALS·Filed 2007·Granted Jul 7, 2009·28 cites·44 claims
- 1194US9004462B2Method and apparatus to help promote contact of gas with vaporized materialADVANCED TECH MATERIALS·Filed 2013·Granted Apr 14, 2015·9 cites·16 claims
- 1294US7531679B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2002·Granted May 12, 2009·55 cites·22 claims
- 1394US7487956B2Method and apparatus to help promote contact of gas with vaporized materialADVANCED TECH MATERIALS·Filed 2007·Granted Feb 10, 2009·27 cites·32 claims
- 1494US7300038B2Method and apparatus to help promote contact of gas with vaporized materialADVANCED TECH MATERIALS·Filed 2004·Granted Nov 27, 2007·67 cites·50 claims
- 1591US5874368ASilicon nitride from bis(tertiarybutylamino)silaneAIR PROD & CHEM·Filed 1997·Granted Feb 23, 1999·186 cites·8 claims
- 1690US5976991ADeposition of silicon dioxide and silicon oxynitride using bis(tertiarybutylamino) silaneAIR PROD & CHEM·Filed 1998·Granted Nov 2, 1999·101 cites·9 claims
- 1788US7108771B2Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin filmsADVANCED TECH MATERIALS·Filed 2001·Granted Sep 19, 2006·24 cites·17 claims
- 1881US8153833B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideWANG ZIYUN·Filed 2011·Granted Apr 10, 2012·3 cites·20 claims
- 1980US5744196ALow temperature deposition of silicon dioxide using organosilanesAIR PROD & CHEM·Filed 1996·Granted Apr 28, 1998·59 cites·7 claims
- 2078US7770448B2Chemical storage device with integrated load cellAIR LIQUIDE ELECTRONICS US LP·Filed 2006·Granted Aug 10, 2010·11 cites·27 claims
- 2177US5492736AFluorine doped silicon oxide processAIR PROD & CHEM·Filed 1994·Granted Feb 20, 1996·60 cites·15 claims
- 2271US8101788B2Silicon precursors and method for low temperature CVD of silicon-containing filmsWANG ZIYUN·Filed 2007·Granted Jan 24, 2012·1 cites·2 claims
- 2369US5902893APurification of organosilanes of group 13 (IIIA) and 15 (VA) impuritiesAIR PROD & CHEM·Filed 1997·Granted May 11, 1999·14 cites·17 claims
- 2464US7423166B2Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin filmsADVANCED TECH MATERIALS·Filed 2003·Granted Sep 9, 2008·8 cites·36 claims
- 2560US6963006B2Process for the production and purification of bis(tertiary-butylamino)silaneAIR PROD & CHEM·Filed 2003·Granted Nov 8, 2005·16 cites·20 claims
- 2658US2006235182A1Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin filmsXU CHONGYING·Filed 2006·Application pending·0 cites
- 2755US8227358B2Silicon precursors and method for low temperature CVD of silicon-containing filmsWANG ZIYUN·Filed 2011·Granted Jul 24, 2012·0 cites·10 claims
- 2855US2012178267A1Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideWANG ZIYUN·Filed 2012·Application pending·0 cites
- 2951US8088938B2Low decomposition storage of a tantalum precursorSTAFFORD NATHAN·Filed 2008·Granted Jan 3, 2012·0 cites·19 claims
- 3050US2015218696A1Method and apparatus to help promote contact of gas with vaporized materialENTEGRIS INC·Filed 2015·Application pending·0 cites
- 3147US2005038276A1Low dielectric constant thin films and chemical vapor deposition method of making sameFiled 2004·Application pending·0 cites
- 3242US2008145978A1Deposition of silicon germanium nitrogen precursors for strain engineeringAIR LIQUIDE ELECTRONICS US LP·Filed 2007·Application pending·0 cites
- 3341US2002172766A1Low dielectric constant thin films and chemical vapor deposition method of making sameFiled 2001·Application pending·0 cites
- 3438US2003064154A1Low-K dielectric thin films and chemical vapor deposition method of making sameFiled 2002·Application pending·0 cites
- 3535US7293569B2Alkylsilanes as solvents for low vapor pressure precursorsAIR LIQUIDE ELECTRONICS US LP·Filed 2006·Granted Nov 13, 2007·0 cites·23 claims
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