Inventor · disambiguated record
Toshiyuki Takizawa
Also filed as: TAKIZAWA TOSHIYUKI
13 granted patents·10 pending applications·125 citations·filing 1990–2021
90Inventor score
Files withPANASONIC CORP7TAKIZAWA TOSHIYUKI6MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3PANASONIC IP MAN CO LTD3FUJITSU LTD2
Top patents by PatentIndex Score
23 records- 0186US8283677B2Nitride semiconductor light-emitting deviceTAKIZAWA TOSHIYUKI·Filed 2009·Granted Oct 9, 2012·12 cites·13 claims
- 0283US9006778B2Nitride semiconductor light emitting device and method of manufacturing the samePANASONIC CORP·Filed 2012·Granted Apr 14, 2015·4 cites·19 claims
- 0381US8816366B2Nitride semiconductor deviceTAKIZAWA TOSHIYUKI·Filed 2011·Granted Aug 26, 2014·5 cites·9 claims
- 0481US8748939B2Transistor and method for manufacturing sameTAKIZAWA TOSHIYUKI·Filed 2012·Granted Jun 10, 2014·5 cites·18 claims
- 0576US7915646B2Nitride semiconductor material, semiconductor element, and manufacturing method thereofPANASONIC CORP·Filed 2007·Granted Mar 29, 2011·4 cites·16 claims
- 0674US7425732B2Nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Sep 16, 2008·5 cites·14 claims
- 0771US4992798AInterference cancellerFUJITSU LTD·Filed 1990·Granted Feb 12, 1991·51 cites·23 claims
- 0864US8716753B2Nitride semiconductor material, semiconductor element, and manufacturing method thereofTAKIZAWA TOSHIYUKI·Filed 2010·Granted May 6, 2014·1 cites·9 claims
- 0963US2023167271A1Additive for organic conductor, method for producing same, organic conductor, and electrolytic capacitorPANASONIC IP MAN CO LTD·Filed 2021·Application pending·0 cites
- 1062US5406589AFractionally spaced cross-polarization interference cancellerFUJITSU LTD·Filed 1992·Granted Apr 11, 1995·33 cites·11 claims
- 1158US7842532B2Nitride semiconductor device and method for manufacturing the samePANASONIC CORP·Filed 2009·Granted Nov 30, 2010·0 cites·12 claims
- 1252US12100936B2Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the devicePANASONIC IP MAN CO LTD·Filed 2020·Granted Sep 24, 2024·0 cites·16 claims
- 1350US2007170441A1Nitride semiconductor device and method for manufacturing the sameTAKIZAWA TOSHIYUKI·Filed 2007·Application pending·0 cites
- 1448US7795630B2Semiconductor device with oxidized regions and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Sep 14, 2010·2 cites·5 claims
- 1548US2023326624A1Oxide insulator film, electronic device and method for producing electronic devicePANASONIC IP MAN CO LTD·Filed 2021·Application pending·0 cites
- 1648US2011058586A1Nitride semiconductor laserTAKIZAWA TOSHIYUKI·Filed 2009·Application pending·0 cites
- 1748US2014376205A1Phosphor and light-emitting device using the samePANASONIC CORP·Filed 2014·Application pending·0 cites
- 1846US7786550B2P-type semiconductor and semiconductor hetero material and manufacturing methods thereofPANASONIC CORP·Filed 2004·Granted Aug 31, 2010·3 cites·6 claims
- 1942US2006203871A1Nitride semiconductor light emitting device and fabrication method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 2039US2011037101A1Semiconductor deviceNAKAZAWA KAZUSHI·Filed 2009·Application pending·0 cites
- 2139US2013043492A1Nitride semiconductor transistorPANASONIC CORP·Filed 2012·Application pending·0 cites
- 2236US2001053260A1Optical module and method for producing the same, and optical circuit deviceFiled 2001·Application pending·0 cites
- 2336US2001026670A1Optical waveguide and method for making the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →