Inventor · disambiguated record
Kevin Sean Matocha
Also filed as: MATOCHA KEVIN · MATOCHA KEVIN S · MATOCHA KEVIN SEAN
24 granted patents·16 pending applications·335 citations·filing 2002–2019
95Inventor score
Files withGEN ELECTRIC32TILAK VINAYAK2ARTHUR STEPHEN DALEY1GEN ELECTTRIC COMPANY1LOU VICTOR LIENKONG1
Top patents by PatentIndex Score
40 records- 0198US7829402B2MOSFET devices and methods of makingGEN ELECTRIC·Filed 2009·Granted Nov 9, 2010·129 cites·33 claims
- 0290US7691711B2Method for fabricating silicon carbide vertical MOSFET devicesGEN ELECTRIC·Filed 2008·Granted Apr 6, 2010·19 cites·25 claims
- 0387US8377756B1Silicon-carbide MOSFET cell structure and method for forming sameGEN ELECTRIC·Filed 2011·Granted Feb 19, 2013·9 cites·11 claims
- 0487US7781312B2Silicon carbide devices and method of makingGEN ELECTRIC·Filed 2006·Granted Aug 24, 2010·12 cites·15 claims
- 0587US7517807B1Methods for fabricating semiconductor structuresGEN ELECTRIC·Filed 2006·Granted Apr 14, 2009·26 cites·10 claims
- 0686US6838741B2Avalanche photodiode for use in harsh environmentsGEN ELECTTRIC COMPANY·Filed 2002·Granted Jan 4, 2005·45 cites·38 claims
- 0784US8507986B2Silicon-carbide MOSFET cell structure and method for forming sameGEN ELECTRIC·Filed 2013·Granted Aug 13, 2013·7 cites·9 claims
- 0884US7589360B2Group III nitride semiconductor devices and methods of makingGEN ELECTRIC·Filed 2006·Granted Sep 15, 2009·11 cites·22 claims
- 0983US7595241B2Method for fabricating silicon carbide vertical MOSFET devicesGEN ELECTRIC·Filed 2006·Granted Sep 29, 2009·9 cites·19 claims
- 1082US9406762B2Semiconductor device with junction termination extensionGEN ELECTRIC·Filed 2013·Granted Aug 2, 2016·4 cites·12 claims
- 1176US7521732B2Vertical heterostructure field effect transistor and associated methodGEN ELECTRIC·Filed 2005·Granted Apr 21, 2009·7 cites·24 claims
- 1275US7112796B2System and method for optical monitoring of a combustion flameGEN ELECTRIC·Filed 2003·Granted Sep 26, 2006·16 cites·26 claims
- 1375US6784430B2Interdigitated flame sensor, system and methodGEN ELECTRIC·Filed 2002·Granted Aug 31, 2004·18 cites·18 claims
- 1474US7002156B2Detection system including avalanche photodiode for use in harsh environmentsGEN ELECTRIC·Filed 2004·Granted Feb 21, 2006·16 cites·27 claims
- 1572US7906427B2Dimension profiling of SiC devicesGEN ELECTRIC·Filed 2008·Granted Mar 15, 2011·3 cites·16 claims
- 1667US9123798B2Insulating gate field effect transistor device and method for providing the sameGEN ELECTRIC·Filed 2012·Granted Sep 1, 2015·2 cites·23 claims
- 1763US8377812B2SiC MOSFETs and self-aligned fabrication methods thereofGEN ELECTRIC·Filed 2009·Granted Feb 19, 2013·1 cites·22 claims
- 1856US11417759B2Semiconductor device and method for reduced bias threshold instabilityGEN ELECTRIC·Filed 2019·Granted Aug 16, 2022·0 cites·18 claims
- 1956US2007157703A1Apparatus, methods, and systems having gas sensor with catalytic gate and variable biasGEN ELECTRIC·Filed 2007·Application pending·0 cites
- 2054US2014361315A1Semiconductor device and method of manufacturing the sameGEN ELECTRIC·Filed 2014·Application pending·0 cites
- 2152US8159002B2Heterostructure device and associated methodTILAK VINAYAK·Filed 2007·Granted Apr 17, 2012·1 cites·17 claims
- 2251US2009267141A1Method for fabricating silicon carbide vertical mosfet devicesGEN ELECTRIC·Filed 2009·Application pending·0 cites
- 2349US9735263B2Transistor and switching system comprising silicon carbide and oxides of varying thicknesses, and method for providing the sameGEN ELECTRIC·Filed 2013·Granted Aug 15, 2017·0 cites·18 claims
- 2449US2013146898A1SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOFGEN ELECTRIC·Filed 2013·Application pending·0 cites
- 2548US2007166832A1Apparatus, methods, and systems having gas sensor with catalytic gate and variable biasGEN ELECTRIC·Filed 2007·Application pending·0 cites
- 2646US8815721B2Semiconductor device and method of manufacturing the sameSTUM ZACHARY MATTHEW·Filed 2010·Granted Aug 26, 2014·0 cites·19 claims
- 2746US2006270053A1Apparatus, methods, and systems having gas sensor with catalytic gate and variable biasGEN ELECTRIC·Filed 2005·Application pending·0 cites
- 2845US2011024765A1Silicon carbide semiconductor structures, devices and methods for making the sameGEN ELECTRIC·Filed 2009·Application pending·0 cites
- 2944US2008108190A1SiC MOSFETs and self-aligned fabrication methods thereofGEN ELECTRIC·Filed 2006·Application pending·0 cites
- 3043US8217398B2Method for the formation of a gate oxide on a SiC substrate and SiC substrates and devices prepared therebyLOU VICTOR LIENKONG·Filed 2008·Granted Jul 10, 2012·0 cites·20 claims
- 3143US2010123140A1SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTUREGEN ELECTRIC·Filed 2008·Application pending·0 cites
- 3242US2009159896A1Silicon carbide mosfet devices and methods of makingGEN ELECTRIC·Filed 2007·Application pending·0 cites
- 3341US8697506B2Heterostructure device and associated methodTILAK VINAYAK·Filed 2012·Granted Apr 15, 2014·0 cites·9 claims
- 3440US10367089B2Semiconductor device and method for reduced bias threshold instabilityARTHUR STEPHEN DALEY·Filed 2012·Granted Jul 30, 2019·0 cites·15 claims
- 3540US2008142811A1MOSFET devices and methods of fabricationGEN ELECTRIC·Filed 2006·Application pending·0 cites
- 3640US2004200975A1Ultraviolet sensors for monitoring energy in the germicidal wavelengthsFiled 2003·Application pending·0 cites
- 3740US2008014693A1Silicon carbide vertical mosfet design for fast switching applicationsGEN ELECTRIC·Filed 2006·Application pending·0 cites
- 3839US2009140293A1Heterostructure device and associated methodGEN ELECTRIC·Filed 2007·Application pending·0 cites
- 3938US2007126007A1SiC semiconductor device and method of fabricating sameMATOCHA KEVIN S·Filed 2005·Application pending·0 cites
- 4038US2007152238A1Heterostructure field effect transistor and associated methodGEN ELECTRIC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →