Inventor · disambiguated record
Takaaki Ami
Also filed as: AMI TAKAAKI
22 granted patents·3 pending applications·371 citations·filing 1996–2015
95Inventor score
Top patents by PatentIndex Score
25 records- 0194US6610548B1Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memorySONY CORP·Filed 2000·Granted Aug 26, 2003·71 cites·29 claims
- 0294US6400489B1Solid-state displacement element, optical element, and interference filterSONY CORP·Filed 2000·Granted Jun 4, 2002·75 cites·24 claims
- 0386US7754504B2Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diodeSONY CORP·Filed 2006·Granted Jul 13, 2010·14 cites·13 claims
- 0486US6577039B2Driving system and actuatorSONY CORP·Filed 2000·Granted Jun 10, 2003·51 cites·43 claims
- 0578US9911894B2Nitride-based III-V group compound semiconductorSONY CORP·Filed 2015·Granted Mar 6, 2018·2 cites·18 claims
- 0675US6143679ALayered crystal structure oxideSONY CORP·Filed 1997·Granted Nov 7, 2000·30 cites·22 claims
- 0773US6749686B2Crystal growth method of an oxide and multi-layered structure of oxidesSONY CORP·Filed 2002·Granted Jun 15, 2004·15 cites·29 claims
- 0870US8859401B2Method for growing a nitride-based III-V group compound semiconductorOHMAE AKIRA·Filed 2011·Granted Oct 14, 2014·2 cites·14 claims
- 0967US6004392AFerroelectric capacitor and manufacturing the same using bismuth layered oxidesSONY CORP·Filed 1996·Granted Dec 21, 1999·32 cites·9 claims
- 1064US6114199AManufacturing method for ferroelectric film and nonvolatile memory using the sameSONY CORP·Filed 1996·Granted Sep 5, 2000·31 cites·14 claims
- 1161US9034738B2Method for growing a nitride-based III-V Group compound semiconductorOHMAE AKIRA·Filed 2006·Granted May 19, 2015·1 cites·15 claims
- 1260US6927436B1Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memorySONY CORP·Filed 2003·Granted Aug 9, 2005·5 cites·2 claims
- 1357US6544857B1Dielectric capacitor manufacturing method and semiconductor storage device manufacturing methodSONY CORP·Filed 1999·Granted Apr 8, 2003·20 cites·30 claims
- 1449US6106616ALayer crystal structure oxide, production method thereof, and memory element using the sameSONY CORP·Filed 1998·Granted Aug 22, 2000·7 cites·21 claims
- 1544US2010308349A1Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic deviceSONY CORP·Filed 2010·Application pending·0 cites
- 1641US2003136331A1Crystal growth method of oxide, cerium oxide, promethium oxide, multi-layered structure of oxides, manufacturing method of field effect transistor, manufacturing method of ferroelectric non-volatile memory and ferroelectric non-volatile memoryFiled 2003·Application pending·0 cites
- 1740US6995069B2Dielectric capacitor manufacturing method and semiconductor storage device manufacturing methodSONY CORP·Filed 2002·Granted Feb 7, 2006·0 cites·39 claims
- 1836US6207082B1Layer-structured oxide and process of producing the sameSONY CORP·Filed 1997·Granted Mar 27, 2001·5 cites·6 claims
- 1936US6171871B1Ferroelectric memory device and their manufacturing methodsSONY CORP·Filed 1998·Granted Jan 9, 2001·4 cites·11 claims
- 2032US6174463B1Layer crystal structure oxide, production method thereof and memory element using the sameSONY CORP·Filed 1998·Granted Jan 16, 2001·1 cites·13 claims
- 2132US5935549AMethod of producing bismuth layered compoundSONY CORP·Filed 1996·Granted Aug 10, 1999·3 cites·1 claims
- 2231US5976624AProcess for producing bismuth compounds, and bismuth compoundsSONY CORP·Filed 1996·Granted Nov 2, 1999·2 cites·1 claims
- 2330US5904766AProcess for preparing bismuth compoundsSONY CORP·Filed 1996·Granted May 18, 1999·0 cites·11 claims
- 2430US2002130337A1Ferroelectric, memory device and their manufacturing methodsFiled 1999·Application pending·0 cites
- 2529US6251360B1Method of producing bismuth layered compoundSONY CORP·Filed 1999·Granted Jun 26, 2001·0 cites·19 claims
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