Inventor · disambiguated record
Martin H. Manley
Also filed as: MANLEY MARTIN · MANLEY MARTIN H · MANLEY MARTIN HAROLD
28 granted patents·1,257 citations·filing 1978–2013
98Inventor score
Files withNAT SEMICONDUCTOR CORP6POWER INTEGRATIONS INC5VLSI TECHNOLOGY INC5PARTHASARATHY VIJAY4BANERJEE SUJIT2
Top patents by PatentIndex Score
28 records- 0196US8022456B2Checkerboarded high-voltage vertical transistor layoutPOWER INTEGRATIONS INC·Filed 2010·Granted Sep 20, 2011·24 cites·13 claims
- 0296US7595523B2Gate pullback at ends of high-voltage vertical transistor structurePOWER INTEGRATIONS INC·Filed 2007·Granted Sep 29, 2009·49 cites·15 claims
- 0395US6221735B1Method for eliminating stress induced dislocations in CMOS devicesPHILIPS SEMICONDUCTORS INC·Filed 2000·Granted Apr 24, 2001·255 cites·15 claims
- 0494US7859037B2Checkerboarded high-voltage vertical transistor layoutPOWER INTEGRATIONS INC·Filed 2007·Granted Dec 28, 2010·25 cites·19 claims
- 0592US5854510ALow power programmable fuse structuresVLSI TECHNOLOGY INC·Filed 1997·Granted Dec 29, 1998·114 cites·24 claims
- 0691US5882998ALow power programmable fuse structures and methods for making the sameVLSI TECHNOLOGY INC·Filed 1998·Granted Mar 16, 1999·99 cites·14 claims
- 0791US5284784ABuried bit-line source-side injection flash memory cellNAT SEMICONDUCTOR CORP·Filed 1991·Granted Feb 8, 1994·136 cites·3 claims
- 0889US8410551B2Checkerboarded high-voltage vertical transistor layoutPARTHASARATHY VIJAY·Filed 2011·Granted Apr 2, 2013·8 cites·17 claims
- 0987US5063172AManufacture of a split-gate EPROM cell using polysilicon spacersNAT SEMICONDUCTOR CORP·Filed 1991·Granted Nov 5, 1991·71 cites·4 claims
- 1086US8164125B2Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuitBANERJEE SUJIT·Filed 2010·Granted Apr 24, 2012·7 cites·27 claims
- 1185US5976943AMethod for bi-layer programmable resistorVLSI TECHNOLOGY INC·Filed 1996·Granted Nov 2, 1999·67 cites·12 claims
- 1285US5108939AMethod of making a non-volatile memory cell utilizing polycrystalline silicon spacer tunnel regionNAT SEMICONDUCTOR CORP·Filed 1990·Granted Apr 28, 1992·68 cites·13 claims
- 1384US9112017B2Integrated transistor and anti-fuse as programming element for a high-voltage integrated circuitPOWER INTEGRATIONS INC·Filed 2013·Granted Aug 18, 2015·5 cites·11 claims
- 1482US6410413B2Semiconductor device with transparent link area for silicide applications and fabrication thereofKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jun 25, 2002·27 cites·9 claims
- 1582US5404037AEEPROM cell with the drain diffusion region self-aligned to the tunnel oxide regionNAT SEMICONDUCTOR CORP·Filed 1994·Granted Apr 4, 1995·52 cites·8 claims
- 1681US5115288ASplit-gate EPROM cell using polysilicon spacersNAT SEMICONDUCTOR CORP·Filed 1991·Granted May 19, 1992·51 cites·4 claims
- 1780US6326675B1Semiconductor device with transparent link area for silicide applications and fabrication thereofPHILIPS SEMICONDUCTOR INC·Filed 1999·Granted Dec 4, 2001·41 cites·27 claims
- 1880US5962911ASemiconductor devices having amorphous silicon antifuse structuresVLSI TECHNOLOGY INC·Filed 1997·Granted Oct 5, 1999·55 cites·10 claims
- 1972US8816433B2Checkerboarded high-voltage vertical transistor layoutPOWER INTEGRATIONS INC·Filed 2013·Granted Aug 26, 2014·2 cites·9 claims
- 2072US8513719B2Integrated transistor and anti-fuse programming element for a high-voltage integrated circuitBANERJEE SUJIT·Filed 2012·Granted Aug 20, 2013·2 cites·13 claims
- 2171US8653583B2Sensing FET integrated with a high-voltage transistorPARTHASARATHY VIJAY·Filed 2007·Granted Feb 18, 2014·5 cites·10 claims
- 2265US6235557B1Programmable fuse and method thereforPHILIPS SEMICONDUCTORS INC·Filed 1999·Granted May 22, 2001·37 cites·20 claims
- 2360US8222691B2Gate pullback at ends of high-voltage vertical transistor structurePARTHASARATHY VIJAY·Filed 2009·Granted Jul 17, 2012·1 cites·6 claims
- 2460US4339715ACarrier-domain magnetometers with compensation responsive to variations in operating conditionsGEN ELECTRIC CO LTD·Filed 1980·Granted Jul 13, 1982·18 cites·10 claims
- 2554US5517453AMemory with multiple erase modesNAT SEMICONDUCTOR CORP·Filed 1994·Granted May 14, 1996·15 cites·17 claims
- 2651US9601613B2Gate pullback at ends of high-voltage vertical transistor structurePARTHASARATHY VIJAY·Filed 2012·Granted Mar 21, 2017·0 cites·6 claims
- 2751US5723358AMethod of manufacturing amorphous silicon antifuse structuresVLSI TECHNOLOGY INC·Filed 1996·Granted Mar 3, 1998·15 cites·10 claims
- 2849US4250518AMagnetic field sensor semiconductor devicesGEN ELECTRIC CO LTD·Filed 1978·Granted Feb 10, 1981·8 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →