Inventor · disambiguated record
Yu-Lam Ho
Also filed as: HO YU-LAM
5 granted patents·93 citations·filing 1994–1997
81Inventor score
Files withLSI LOGIC CORP5
Top patents by PatentIndex Score
5 records- 0172US5585286AImplantation of a semiconductor substrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant subsequently implanted into the substrate to form P- LDD region of a PMOS deviceLSI LOGIC CORP·Filed 1995·Granted Dec 17, 1996·39 cites·16 claims
- 0263US5468974AControl and modification of dopant distribution and activation in polysiliconLSI LOGIC CORP·Filed 1994·Granted Nov 21, 1995·36 cites·29 claims
- 0341US6093936AIntegrated circuit with isolation of field oxidation by noble gas implantationLSI LOGIC CORP·Filed 1997·Granted Jul 25, 2000·9 cites·5 claims
- 0441US5717238ASubstrate with controlled amount of noble gas ions to reduce channeling and/or diffusion of a boron dopant forming P-LDD region of a PMOS deviceLSI LOGIC CORP·Filed 1996·Granted Feb 10, 1998·8 cites·16 claims
- 0527US6432759B1Method of forming source and drain regions for CMOS devicesLSI LOGIC CORP·Filed 1994·Granted Aug 13, 2002·1 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →