Inventor · disambiguated record
Mei F. Li
Also filed as: LI MEI · LI MEI F
13 granted patents·435 citations·filing 1990–2017
93Inventor score
Top patents by PatentIndex Score
13 records- 0187US5185535AControl of backgate bias for low power high speed CMOS/SOI devicesHUGHES AIRCRAFT CO·Filed 1991·Granted Feb 9, 1993·99 cites·13 claims
- 0285US5807771ARadiation-hard, low power, sub-micron CMOS on a SOI substrateRAYTHEON CO·Filed 1996·Granted Sep 15, 1998·67 cites·21 claims
- 0378US5137837ARadiation-hard, high-voltage semiconductive device structure fabricated on SOI substrateHUGHES AIRCRAFT CO·Filed 1990·Granted Aug 11, 1992·62 cites·10 claims
- 0477US5378909AFlash EEPROM cell having gap between floating gate and drain for high hot electron injection efficiency for programmingHUGHES AIRCRAFT CO·Filed 1993·Granted Jan 3, 1995·42 cites·5 claims
- 0577US5024965AManufacturing high speed low leakage radiation hardened CMOS/SOI devicesCHANG CHEN CHI P·Filed 1990·Granted Jun 18, 1991·68 cites·20 claims
- 0666US5140390AHigh speed silicon-on-insulator deviceHUGHES AIRCRAFT CO·Filed 1991·Granted Aug 18, 1992·38 cites·6 claims
- 0757US5047356AHigh speed silicon-on-insulator device and process of fabricating sameHUGHES AIRCRAFT CO·Filed 1990·Granted Sep 10, 1991·28 cites·18 claims
- 0847US5523244ATransistor fabrication method using dielectric protection layers to eliminate emitter defectsHUGHES AIRCRAFT CO·Filed 1994·Granted Jun 4, 1996·12 cites·18 claims
- 0941US5511036AFlash EEPROM cell and array with bifurcated floating gatesHUGHES AIRCRAFT CO·Filed 1994·Granted Apr 23, 1996·8 cites·19 claims
- 1038US5652448ANonvolatile memory deviceHUGHES AIRCRAFT CO·Filed 1996·Granted Jul 29, 1997·4 cites·4 claims
- 1137US10784679B2Electrostatic discharge protection apparatus and integrated circuit with multiple power domainsHUAWEI TECH CO LTD·Filed 2017·Granted Sep 22, 2020·0 cites·20 claims
- 1237US5343424ASplit-gate flash EEPROM cell and array with low voltage erasureHUGHES AIRCRAFT CO·Filed 1993·Granted Aug 30, 1994·6 cites·14 claims
- 1331US5578515AMethod for fabricating gate structure for nonvolatile memory device comprising an EEPROM and a latch transistorHUGHES AIRCRAFT CO·Filed 1995·Granted Nov 26, 1996·1 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →