Inventor · disambiguated record
Mark A. Halfacre
Also filed as: HALFACRE MARK A
7 granted patents·213 citations·filing 1981–1987
88Inventor score
Top patents by PatentIndex Score
7 records- 0184US4574467AN- well CMOS process on a P substrate with double field guard rings and a PMOS buried channelSOLID STATE SCIENT·Filed 1983·Granted Mar 11, 1986·39 cites·3 claims
- 0283US4598460AMethod of making a CMOS EPROM with independently selectable thresholdsSOLID STATE SCIENT·Filed 1984·Granted Jul 8, 1986·38 cites·10 claims
- 0378US4646425AMethod for making a self-aligned CMOS EPROM wherein the EPROM floating gate and CMOS gates are made from one polysilicon layerSOLID STATE SCIENT·Filed 1984·Granted Mar 3, 1987·31 cites·14 claims
- 0477US4385947AMethod for fabricating CMOS in P substrate with single guard ring using local oxidationHARRIS CORP·Filed 1981·Granted May 31, 1983·45 cites·16 claims
- 0565US4590665AMethod for double doping sources and drains in an EPROMSOLID STATE SCIENT·Filed 1984·Granted May 27, 1986·27 cites·3 claims
- 0656US4774202AMemory device with interconnected polysilicon layers and method for makingSPRAGUE ELECTRIC CO·Filed 1987·Granted Sep 27, 1988·24 cites·8 claims
- 0736US4706102AMemory device with interconnected polysilicon layers and method for makingSPRAGUE ELECTRIC CO·Filed 1985·Granted Nov 10, 1987·9 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →