Inventor · disambiguated record
Eric J. Stewart
Also filed as: STEWART ERIC J · STEWART ERIC JONATHAN
19 granted patents·2 pending applications·240 citations·filing 2006–2020
94Inventor score
Files withNORTHROP GRUMMAN SYSTEMS CORP5NECHAY BETTINA A4CHANG JOSEPHINE BEA2NORTHROP GRUMMAN CORP2PARKE JUSTIN ANDREW2
Top patents by PatentIndex Score
21 records- 0193US7719055B1Cascode power switch topologiesNORTHROP GRUMMAN SYSTEMS CORP·Filed 2007·Granted May 18, 2010·150 cites·14 claims
- 0291US9773897B2Multichannel devices with gate structures to increase breakdown voltageNECHAY BETTINA A·Filed 2015·Granted Sep 26, 2017·11 cites·20 claims
- 0389US10084075B2Methods of making multichannel devices with improved performanceNECHAY BETTINA A·Filed 2017·Granted Sep 25, 2018·5 cites·4 claims
- 0487US7982239B2Power switching transistorsNORTHROP GRUMMAN CORP·Filed 2007·Granted Jul 19, 2011·17 cites·10 claims
- 0586US9711615B2Multichannel devices with improved performance and methods of making the sameNECHAY BETTINA A·Filed 2016·Granted Jul 18, 2017·4 cites·6 claims
- 0686US9419120B2Multichannel devices with improved performanceNECHAY BETTINA A·Filed 2014·Granted Aug 16, 2016·6 cites·19 claims
- 0785US9466679B2All around contact device and method of making the sameSTEWART ERIC J·Filed 2014·Granted Oct 11, 2016·8 cites·9 claims
- 0885US9385224B2Method of forming an integrated multichannel device and single channel device structureRENALDO KAREN M·Filed 2014·Granted Jul 5, 2016·7 cites·20 claims
- 0984US9755021B2Integrated multichannel and single channel device structure and method of making the sameRENALDO KAREN M·Filed 2016·Granted Sep 5, 2017·4 cites·20 claims
- 1084US9202906B2Superlattice crenelated gate field effect transistorHOWELL ROBERT S·Filed 2013·Granted Dec 1, 2015·12 cites·20 claims
- 1183US9472634B2All around contact device and method of making the sameSTEWART ERIC J·Filed 2016·Granted Oct 18, 2016·4 cites·11 claims
- 1273US10468406B2Integrated enhancement mode and depletion mode device structure and method of making the samePARKE JUSTIN ANDREW·Filed 2014·Granted Nov 5, 2019·3 cites·6 claims
- 1372US7667242B1Systems and methods for maximizing breakdown voltage in semiconductor devicesNORTHROP GRUMMAN SYSTEMS CORP·Filed 2006·Granted Feb 23, 2010·5 cites·8 claims
- 1466US9711616B2Dual-channel field effect transistor device having increased amplifier linearityNORTHROP GRUMMAN SYSTEMS CORP·Filed 2014·Granted Jul 18, 2017·2 cites·17 claims
- 1558US10985243B2Castellated superjunction transistorsCHANG JOSEPHINE BEA·Filed 2020·Granted Apr 20, 2021·0 cites·20 claims
- 1658US7535039B1Vertically integrated dual gate transistor structure and method of making sameNORTHROP GRUMMAN CORP·Filed 2006·Granted May 19, 2009·2 cites·15 claims
- 1755US10784341B2Castellated superjunction transistorsCHANG JOSEPHINE BEA·Filed 2019·Granted Sep 22, 2020·0 cites·14 claims
- 1854US10854600B2Integrated enhancement mode and depletion mode device structure and method of making the samePARKE JUSTIN ANDREW·Filed 2019·Granted Dec 1, 2020·0 cites·8 claims
- 1952US8110494B1Systems and methods for maximizing breakdown voltage in semiconductor devicesVELIADIS JOHN V·Filed 2009·Granted Feb 7, 2012·0 cites·3 claims
- 2043US2009283824A1Cool impact-ionization transistor and method for making sameNORTHROP GRUMMAN SYSTEMS CORP·Filed 2008·Application pending·0 cites
- 2142US2009179297A1Junction barrier schottky diode with highly-doped channel region and methodsNORTHROP GRUMMAN SYSTEMS CORP·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →