Inventor · disambiguated record
Steven P. Denbaars
Also filed as: DENBAARS STEVEN · DENBAARS STEVEN P
206 granted patents·98 pending applications·7,009 citations·filing 1993–2024
99Inventor score
Top patents by PatentIndex Score
304 records- 0199US10718491B1Infrared illumination device configured with a gallium and nitrogen containing laser sourceSORAA LASER DIODE INC·Filed 2019·Granted Jul 21, 2020·49 cites·36 claims
- 0299US6410942B1Enhanced light extraction through the use of micro-LED arraysCREE LIGHTING CO·Filed 2000·Granted Jun 25, 2002·631 cites·38 claims
- 0398US8835959B2Transparent light emitting diodesUNIV CALIFORNIA·Filed 2012·Granted Sep 16, 2014·33 cites·28 claims
- 0498US8372204B2Susceptor for MOCVD reactorCREE INC·Filed 2006·Granted Feb 12, 2013·549 cites·16 claims
- 0598US7868341B2Optical designs for high-efficacy white-light emitting diodesUNIV CALIFORNIA·Filed 2008·Granted Jan 11, 2011·63 cites·29 claims
- 0698US7709284B2Method for deposition of magnesium doped (Al, In, Ga, B)N layersUNIV CALIFORNIA·Filed 2007·Granted May 4, 2010·166 cites·20 claims
- 0798US7691658B2Method for improved growth of semipolar (Al,In,Ga,B)NUNIV CALIFORNIA·Filed 2007·Granted Apr 6, 2010·266 cites·26 claims
- 0898US7338828B2Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)UNIV CALIFORNIA·Filed 2006·Granted Mar 4, 2008·324 cites·11 claims
- 0998US7335920B2LED with current confinement structure and surface rougheningCREE INC·Filed 2005·Granted Feb 26, 2008·168 cites·26 claims
- 1098US7220324B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2006·Granted May 22, 2007·317 cites·18 claims
- 1198US7208393B2Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2005·Granted Apr 24, 2007·104 cites·19 claims
- 1298US7186302B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Mar 6, 2007·87 cites·20 claims
- 1398US6900070B2Dislocation reduction in non-polar gallium nitride thin filmsUNIV CALIFORNIA·Filed 2003·Granted May 31, 2005·135 cites·22 claims
- 1498US6821804B2Enhanced light extraction in LEDs through the use of internal and external optical elementsCREE INC·Filed 2003·Granted Nov 23, 2004·305 cites·4 claims
- 1598US6657236B1Enhanced light extraction in LEDs through the use of internal and external optical elementsCREE LIGHTING CO·Filed 2000·Granted Dec 2, 2003·712 cites·36 claims
- 1697US10217916B2Transparent light emitting diodesUNIV CALIFORNIA·Filed 2014·Granted Feb 26, 2019·19 cites·26 claims
- 1797US7361576B2Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)UNIV CALIFORNIA·Filed 2006·Granted Apr 22, 2008·121 cites·18 claims
- 1897US7122844B2Susceptor for MOCVD reactorCREE INC·Filed 2002·Granted Oct 17, 2006·335 cites·25 claims
- 1996US7846757B2Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2006·Granted Dec 7, 2010·33 cites·23 claims
- 2096US7687813B2Standing transparent mirrorless light emitting diodeUNIV CALIFORNIA·Filed 2007·Granted Mar 30, 2010·33 cites·32 claims
- 2196US7682944B2Pendeo epitaxial structures and devicesCREE INC·Filed 2007·Granted Mar 23, 2010·37 cites·34 claims
- 2296US7582910B2High efficiency light emitting diode (LED) with optimized photonic crystal extractorUNIV CALIFORNIA·Filed 2005·Granted Sep 1, 2009·40 cites·14 claims
- 2396US7220658B2Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2003·Granted May 22, 2007·105 cites·21 claims
- 2496US5966393AHybrid light-emitting sources for efficient and cost effective white lighting and for full-color applicationsUNIV CALIFORNIA·Filed 1997·Granted Oct 12, 1999·237 cites·38 claims
- 2595US11125415B2Infrared illumination device configured with a gallium and nitrogen containing laser sourceKYOCERA SLD LASER INC·Filed 2020·Granted Sep 21, 2021·6 cites·20 claims
- 2695US10658557B1Transparent light emitting device with light emitting diodesUNIV CALIFORNIA·Filed 2019·Granted May 19, 2020·7 cites·2 claims
- 2795US10205300B1Gallium and nitrogen containing laser diode dazzling devices and methods of useSORAA LASER DIODE INC·Filed 2015·Granted Feb 12, 2019·14 cites·24 claims
- 2895US9859464B2Lighting emitting diode with light extracted from front and back sides of a lead frameUNIV CALIFORNIA·Filed 2015·Granted Jan 2, 2018·18 cites·20 claims
- 2995US7994527B2High light extraction efficiency light emitting diode (LED)UNIV CALIFORNIA·Filed 2006·Granted Aug 9, 2011·46 cites·20 claims
- 3095US7781789B2Transparent mirrorless light emitting diodeUNIV CALIFORNIA·Filed 2007·Granted Aug 24, 2010·28 cites·56 claims
- 3195US7723216B2In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)NUNIV CALIFORNIA·Filed 2007·Granted May 25, 2010·24 cites·27 claims
- 3295US7345298B2Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers by growth over a patterned substrateUNIV CALIFORNIA·Filed 2005·Granted Mar 18, 2008·25 cites·35 claims
- 3395US7091514B2Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devicesUNIV CALIFORNIA·Filed 2003·Granted Aug 15, 2006·70 cites·9 claims
- 3494US9240529B2Textured phosphor conversion layer light emitting diodeUNIV CALIFORNIA·Filed 2014·Granted Jan 19, 2016·17 cites·24 claims
- 3594US8860051B2Textured phosphor conversion layer light emitting diodeFELLOWS NATALIE N·Filed 2007·Granted Oct 14, 2014·87 cites·16 claims
- 3694US8022423B2Standing transparent mirrorless light emitting diodeUNIV CALIFORNIA·Filed 2010·Granted Sep 20, 2011·15 cites·16 claims
- 3794US7719020B2(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication methodUNIV CALIFORNIA·Filed 2006·Granted May 18, 2010·28 cites·20 claims
- 3894US7291864B2Single or multi-color high efficiency light emitting diode (LED) by growth over a patterned substrateUNIV CALIFORNIA·Filed 2005·Granted Nov 6, 2007·24 cites·33 claims
- 3993US8368109B2Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiencyUNIV CALIFORNIA·Filed 2011·Granted Feb 5, 2013·9 cites·18 claims
- 4093US7704331B2Technique for the growth of planar semi-polar gallium nitrideUNIV CALIFORNIA·Filed 2007·Granted Apr 27, 2010·14 cites·30 claims
- 4193US7687293B2Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Mar 30, 2010·17 cites·14 claims
- 4293US7504274B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionUNIV CALIFORNIA·Filed 2007·Granted Mar 17, 2009·16 cites·12 claims
- 4393US5985687AMethod for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materialsUNIV CALIFORNIA·Filed 1996·Granted Nov 16, 1999·191 cites·31 claims
- 4493US5796771AMiniature self-pumped monolithically integrated solid state laserUNIV CALIFORNIA·Filed 1996·Granted Aug 18, 1998·140 cites·49 claims
- 4592US9611987B2White light source employing a III-nitride based laser diode pumping a phosphorUNIV CALIFORNIA·Filed 2013·Granted Apr 4, 2017·15 cites·22 claims
- 4692US8866149B2Method for the reuse of gallium nitride epitaxial substratesUNIV CALIFORNIA·Filed 2013·Granted Oct 21, 2014·9 cites·19 claims
- 4792US8536618B2Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arraysRICHARDSON JACOB J·Filed 2010·Granted Sep 17, 2013·16 cites·24 claims
- 4892US8114698B2High light extraction efficiency nitride based light emitting diode by surface rougheningZHONG HONG·Filed 2008·Granted Feb 14, 2012·17 cites·8 claims
- 4992US7956360B2Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxyUNIV CALIFORNIA·Filed 2007·Granted Jun 7, 2011·15 cites·7 claims
- 5092US7813400B2Group-III nitride based laser diode and method for fabricating sameCREE INC·Filed 2006·Granted Oct 12, 2010·21 cites·20 claims
Showing the top 50 of 304 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →