Inventor · disambiguated record
Wei-Kung Tsai
Also filed as: TSAI WEI-KUNG
17 granted patents·1 pending application·32 citations·filing 2003–2019
90Inventor score
Top patents by PatentIndex Score
18 records- 0189US9761546B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 0281US9711521B2Substrate fabrication method to improve RF (radio frequency) device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 0373US10515949B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 24, 2019·3 cites·20 claims
- 0471US11264378B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·1 cites·20 claims
- 0570US10304723B1Process to form SOI substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 28, 2019·1 cites·20 claims
- 0667US9048287B1Mechanisms for forming semiconductor device structure with floating spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·2 cites·17 claims
- 0764US11121100B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 0863US9799557B2Semiconductor device structure with metal ring on silicon-on-insulator (SOI) substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 24, 2017·1 cites·18 claims
- 0962US8941211B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
- 1062US6946391B2Method for forming dual damascenesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 20, 2005·14 cites·24 claims
- 1158US11121098B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 14, 2021·0 cites·20 claims
- 1254US11158534B2SOI substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
- 1353US9230988B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 5, 2016·0 cites·20 claims
- 1450US9589831B2Mechanisms for forming radio frequency (RF) area of integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·0 cites·20 claims
- 1546US10090327B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 2, 2018·0 cites·19 claims
- 1645US9343352B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 17, 2016·0 cites·20 claims
- 1739US11063117B2Semiconductor device structure having carrier-trapping layers with different grain sizesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 13, 2021·0 cites·20 claims
- 1828US2005092255A1Edge-contact wafer holder for CMP load/unload stationTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →