Inventor · disambiguated record
Robb Johnson
Also filed as: JOHNSON ROBB · JOHNSON ROBB A · JOHNSON ROBB ALLEN
12 granted patents·2 pending applications·239 citations·filing 2000–2017
92Inventor score
Top patents by PatentIndex Score
14 records- 0195US6900519B2Diffused extrinsic base and method for fabricationIBM·Filed 2004·Granted May 31, 2005·95 cites·17 claims
- 0288US6600199B2Deep trench-buried layer array and integrated device structures for noise isolation and latch up immunityIBM·Filed 2000·Granted Jul 29, 2003·51 cites·14 claims
- 0387US9696604B1Method for forming a self-aligned Mach-Zehnder interferometerINPHI CORP·Filed 2016·Granted Jul 4, 2017·5 cites·3 claims
- 0486US6426265B1Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2001·Granted Jul 30, 2002·25 cites·23 claims
- 0584US6812545B2Epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2003·Granted Nov 2, 2004·28 cites·7 claims
- 0672US6617220B2Method for fabricating an epitaxial base bipolar transistor with raised extrinsic baseIBM·Filed 2001·Granted Sep 9, 2003·15 cites·13 claims
- 0768US6660664B1Structure and method for formation of a blocked silicide resistorIBM·Filed 2000·Granted Dec 9, 2003·9 cites·22 claims
- 0866US7713829B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2006·Granted May 11, 2010·1 cites·14 claims
- 0960US6815802B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2002·Granted Nov 9, 2004·5 cites·5 claims
- 1054US9746744B1Method for forming a self-aligned mach-zehnder interferometerINPHI CORP·Filed 2017·Granted Aug 29, 2017·0 cites·20 claims
- 1154US6869854B2Diffused extrinsic base and method for fabricationIBM·Filed 2002·Granted Mar 22, 2005·5 cites·29 claims
- 1246US7173274B2Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technologyIBM·Filed 2004·Granted Feb 6, 2007·0 cites·10 claims
- 1343US2005095787A1Structure and method for formation of a bipolar resistorIBM·Filed 2004·Application pending·0 cites
- 1434US2002197807A1Non-self-aligned SiGe heterojunction bipolar transistorIBM·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →