Inventor · disambiguated record
Bi-Ling Chen
Also filed as: CHEN BI-LING
14 granted patents·1 pending application·618 citations·filing 1997–2002
94Inventor score
Top patents by PatentIndex Score
15 records- 0192US6159839AMethod for fabricating borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnectionsVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Dec 12, 2000·146 cites·24 claims
- 0288US5956594AMethod for simultaneously forming capacitor plate and metal contact structures for a high density DRAM deviceVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Sep 21, 1999·106 cites·26 claims
- 0387US6476488B1Method for fabricating borderless and self-aligned polysilicon and metal contact landing plugs for multilevel interconnectionsVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Nov 5, 2002·49 cites·5 claims
- 0484US6025255ATwo-step etching process for forming self-aligned contactsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Feb 15, 2000·91 cites·25 claims
- 0576US6184081B1Method of fabricating a capacitor under bit line DRAM structure using contact hole linersVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Feb 6, 2001·57 cites·26 claims
- 0668US6037211AMethod of fabricating contact holes in high density integrated circuits using polysilicon landing plug and self-aligned etching processesVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Mar 14, 2000·37 cites·19 claims
- 0766US6670279B1Method of forming shallow trench isolation with rounded corners and divot-free by using in-situ formed spacersTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 30, 2003·14 cites·58 claims
- 0857US6239011B1Method of self-aligned contact hole etching by fluorine-containing dischargesVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted May 29, 2001·22 cites·16 claims
- 0955US6140240AMethod for eliminating CMP induced microscratchesVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Oct 31, 2000·19 cites·17 claims
- 1055US6080662AMethod for forming multi-level contacts using a H-containing fluorocarbon chemistryVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 27, 2000·20 cites·19 claims
- 1151US6565759B1Etching processVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 20, 2003·16 cites·21 claims
- 1251US6103588AMethod of forming a contact hole in a semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Aug 15, 2000·17 cites·19 claims
- 1346US6074952AMethod for forming multi-level contactsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 13, 2000·13 cites·20 claims
- 1445US6245656B1Method for producing multi-level contactsVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jun 12, 2001·11 cites·8 claims
- 1531US2004121545A1Method to fabricate a square word line poly spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →