Inventor · disambiguated record
Seiichi Shishiguchi
Also filed as: SHISHIGUCHI SEIICHI
16 granted patents·1 pending application·525 citations·filing 1988–1998
95Inventor score
Top patents by PatentIndex Score
17 records- 0192US5798544ASemiconductor memory device having trench isolation regions and bit lines formed thereoverNEC CORP·Filed 1994·Granted Aug 25, 1998·105 cites·8 claims
- 0282US6372591B1Fabrication method of semiconductor device using ion implantationNEC CORP·Filed 1998·Granted Apr 16, 2002·67 cites·12 claims
- 0382US5821158ASubstrate surface treatment method capable of removing a spontaneous oxide film at a relatively low temperatureNEC CORP·Filed 1996·Granted Oct 13, 1998·65 cites·10 claims
- 0482US4992301AChemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thicknessNEC CORP·Filed 1988·Granted Feb 12, 1991·52 cites·10 claims
- 0575US6017823AMethod of forming a MOS field effect transistor with improved gate side wall insulation filmsNEC CORP·Filed 1997·Granted Jan 25, 2000·48 cites·11 claims
- 0670US6190976B1Fabrication method of semiconductor device using selective epitaxial growthNEC CORP·Filed 1998·Granted Feb 20, 2001·34 cites·5 claims
- 0768US5972785AMethod for manufacturing a semiconductor device having a refractory metal silicide layerNEC CORP·Filed 1997·Granted Oct 26, 1999·27 cites·14 claims
- 0865US5543347AMethod of forming silicon film having jagged surfaceNEC CORP·Filed 1994·Granted Aug 6, 1996·24 cites·27 claims
- 0960US5470780AMethod of fabricating poly-silicon resistorNEC CORP·Filed 1994·Granted Nov 28, 1995·19 cites·6 claims
- 1057US5951774ACold-wall operated vapor-phase growth systemNEC CORP·Filed 1997·Granted Sep 14, 1999·22 cites·14 claims
- 1152US5894037ASilicon semiconductor substrate and method of fabricating the sameNEC CORP·Filed 1996·Granted Apr 13, 1999·17 cites·5 claims
- 1252US5858853AMethod for forming capacitor electrode having jagged surfaceNEC CORP·Filed 1995·Granted Jan 12, 1999·14 cites·40 claims
- 1347US6010914AMethod for manufacturing a semiconductor deviceNEC CORP·Filed 1997·Granted Jan 4, 2000·13 cites·10 claims
- 1443US5773357AMethod for producing silicon film to bury contact holeNEC CORP·Filed 1996·Granted Jun 30, 1998·10 cites·20 claims
- 1536US5783257AMethod for forming doped polysilicon filmsTOKYO ELECTRON LTD·Filed 1997·Granted Jul 21, 1998·7 cites·3 claims
- 1630US2001012670A1Semiconductor device and method manufacturing sameFiled 1998·Application pending·0 cites
- 1729US6258635B1Removal of metal contaminants from the surface of a silicon substrate by diffusion into the bulkNEC CORP·Filed 1998·Granted Jul 10, 2001·1 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →