Inventor · disambiguated record
Jia-Hwang Chang
Also filed as: CHANG JIA-HWANG
17 granted patents·1 pending application·531 citations·filing 1989–2016
95Inventor score
Files withACTEL CORP7NINGBO ADVANCED MEMORY TECH CORP3ROHM CORP3GRANDIS INC2JIANGSU ADVANCED MEMORY TECH CO LTD1
Top patents by PatentIndex Score
18 records- 0197US5083083ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1989·Granted Jan 21, 1992·126 cites·6 claims
- 0289US5689459ALow voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and eraseROHM CORP·Filed 1996·Granted Nov 18, 1997·66 cites·28 claims
- 0387US5223792ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1992·Granted Jun 29, 1993·52 cites·3 claims
- 0486US5208530ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1992·Granted May 4, 1993·47 cites·1 claims
- 0585US9514817B1Non-volatile memory device with memristorNINGBO ADVANCED MEMORY TECH CORP·Filed 2016·Granted Dec 6, 2016·8 cites·18 claims
- 0684US7894248B2Programmable and redundant circuitry based on magnetic tunnel junction (MTJ)GRANDIS INC·Filed 2008·Granted Feb 22, 2011·18 cites·16 claims
- 0782US5432441ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1993·Granted Jul 11, 1995·33 cites·2 claims
- 0880US9401203B1Memory driving circuitNINGBO ADVANCED MEMORY TECH CORP·Filed 2015·Granted Jul 26, 2016·6 cites·11 claims
- 0980US5365165ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1992·Granted Nov 15, 1994·30 cites·4 claims
- 1079US5309091ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1992·Granted May 3, 1994·35 cites·3 claims
- 1178US5587947ALow voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and eraseROHM CORP·Filed 1995·Granted Dec 24, 1996·33 cites·3 claims
- 1275US5341092ATestability architecture and techniques for programmable interconnect architectureACTEL CORP·Filed 1992·Granted Aug 23, 1994·36 cites·4 claims
- 1372US5615147ALow voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and eraseROHM CORP·Filed 1995·Granted Mar 25, 1997·24 cites·11 claims
- 1464US9865347B2Memory driving circuitJIANGSU ADVANCED MEMORY TECH CO LTD·Filed 2016·Granted Jan 9, 2018·2 cites·10 claims
- 1562US9368203B1Memory device and driving method thereofNINGBO ADVANCED MEMORY TECHNOLOGY CORP·Filed 2015·Granted Jun 14, 2016·2 cites·20 claims
- 1656US5687120ALow voltage one transistor flash eeprom cell using fowler-nordheim programming and eraseROHN CORP·Filed 1995·Granted Nov 11, 1997·13 cites·3 claims
- 1736US2009185410A1Method and system for providing spin transfer tunneling magnetic memories utilizing unidirectional polarity selection devicesGRANDIS INC·Filed 2008·Application pending·0 cites
- 1830US9543006B2Non-volatile memory cell and non-volatile memory deviceNINGBO ADVANCED MEMORY TECH CORP·Filed 2015·Granted Jan 10, 2017·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →