Inventor · disambiguated record
Joffre F. Bernard
Also filed as: BERNARD JOFFRE · BERNARD JOFFRE F
17 granted patents·1 pending application·226 citations·filing 2000–2007
94Inventor score
Top patents by PatentIndex Score
18 records- 0190US6630741B1Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 7, 2003·58 cites·20 claims
- 0278US6309959B1Formation of self-aligned passivation for interconnect to minimize electromigrationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 30, 2001·28 cites·19 claims
- 0377US6515367B1Sub-cap and method of manufacture therefor in integrated circuit capping layersADVANCED MICRO DEVICES INC·Filed 2002·Granted Feb 4, 2003·21 cites·14 claims
- 0477US6465867B1Amorphous and gradated barrier layer for integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·25 cites·10 claims
- 0573US8093698B2Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal deviceRATHOR MANUJ·Filed 2006·Granted Jan 10, 2012·6 cites·15 claims
- 0671US6406996B1Sub-cap and method of manufacture therefor in integrated circuit capping layersADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 18, 2002·16 cites·6 claims
- 0769US6469387B1Semiconductor device formed by calcium doping a copper surface using a chemical solutionADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·11 cites·11 claims
- 0866US6541286B1Imaging of integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·12 cites·14 claims
- 0965US6770559B1Method of forming wiring by implantation of seed layer materialADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·12 cites·33 claims
- 1065US6479898B1Dielectric treatment in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 12, 2002·9 cites·10 claims
- 1162US6541860B1Barrier-to-seed layer alloying in integrated circuit interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·10 cites·9 claims
- 1260US6444580B1Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 3, 2002·6 cites·10 claims
- 1358US6624074B1Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solutionADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 23, 2003·5 cites·11 claims
- 1454US7790497B2Method to prevent alloy formation when forming layered metal oxides by metal oxidationSPANSION LLC·Filed 2007·Granted Sep 7, 2010·0 cites·10 claims
- 1554US6621165B1Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surfaceFiled 2002·Granted Sep 16, 2003·4 cites·19 claims
- 1651US6811671B1Method of controlling zinc-doping in a copper-zinc alloy thin film electroplated on a copper surface and a semiconductor device thereby formedADVANCED MICRO DEVICES INC·Filed 2002·Granted Nov 2, 2004·3 cites·18 claims
- 1750US8373148B2Memory device with improved performanceSPANSION LLC·Filed 2007·Granted Feb 12, 2013·0 cites·8 claims
- 1835US2003217462A1Method for improving electromigration performance of metallization features through multiple depositions of binary alloysFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →