Inventor · disambiguated record
Hua-Chou Tseng
Also filed as: TSENG HUA-CHOU
41 granted patents·16 pending applications·480 citations·filing 1998–2023
97Inventor score
Files withUNITED MICROELECTRONICS CORP26TAIWAN SEMICONDUCTOR MFG CO LTD12LIANG VICTOR CHIANG2CHANG LI-WEN1CHEN SHUO-MAO1
Top patents by PatentIndex Score
57 records- 0196US6368941B1Fabrication of a shallow trench isolation by plasma oxidationUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 9, 2002·170 cites·13 claims
- 0291US6521470B1Method of measuring thickness of epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2002·Granted Feb 18, 2003·95 cites·19 claims
- 0386US8324713B2Profile design for lateral-vertical bipolar junction transistorCHEN SHUO-MAO·Filed 2010·Granted Dec 4, 2012·9 cites·17 claims
- 0483US6489206B2Method for forming self-aligned local-halo metal-oxide-semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 3, 2002·30 cites·3 claims
- 0580US9711593B2Dummy gate for a high voltage transistor deviceTSENG HUA-CHOU·Filed 2012·Granted Jul 18, 2017·6 cites·16 claims
- 0677US8114752B2Structure of capacitor setLIANG VICTOR CHIANG·Filed 2010·Granted Feb 14, 2012·5 cites·20 claims
- 0776US7321285B2Method for fabricating a transformer integrated with a semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 22, 2008·6 cites·13 claims
- 0876US6323073B1Method for forming doped regions on an SOI deviceUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 27, 2001·22 cites·16 claims
- 0976US6294415B1Method of fabricating a MOS transistorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Sep 25, 2001·19 cites·20 claims
- 1074US9196751B2Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 24, 2015·2 cites·20 claims
- 1174US8334187B2Hard mask for thin film resistor manufactureCHANG LI-WEN·Filed 2010·Granted Dec 18, 2012·4 cites·20 claims
- 1272US11450769B2Transistor with asymmetric source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·0 cites·20 claims
- 1372US10276716B2Transistor with asymmetric source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·1 cites·20 claims
- 1467US6015753AMethod of forming a self-aligned silicideUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 18, 2000·26 cites·13 claims
- 1563US10964814B2Transistor with asymmetric source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·0 cites·20 claims
- 1663US6559016B2Method of manufacturing low-leakage, high-performance deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted May 6, 2003·8 cites·18 claims
- 1760US8133792B2Method for reducing capacitance variation between capacitorsLIANG VICTOR-CHIANG·Filed 2006·Granted Mar 13, 2012·2 cites·26 claims
- 1860US6855611B2Fabrication method of an electrostatic discharge protection circuit with a low resistant current pathUNITED MICROELECTRONICS CORP·Filed 2002·Granted Feb 15, 2005·7 cites·5 claims
- 1960US6476448B2Front stage process of a fully depleted silicon-on-insulator device and a structure thereofUNITED MICROELECTRONICS CORP·Filed 2001·Granted Nov 5, 2002·8 cites·5 claims
- 2059US7253480B2Structure and fabrication method of electrostatic discharge protection circuitUNITED MICROELECTRONICS CORP·Filed 2004·Granted Aug 7, 2007·6 cites·11 claims
- 2159US6509218B2Front stage process of a fully depleted silicon-on-insulator deviceUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jan 21, 2003·7 cites·17 claims
- 2259US2025169085A1Semiconductor devices including circuits under inductor (cul)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2358US10243075B2Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 26, 2019·0 cites·20 claims
- 2457US6238988B1Method of forming a MOS transistorUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 29, 2001·17 cites·11 claims
- 2557US2024355728A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2655US8987825B2Semiconductor device having a double deep wellTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 24, 2015·0 cites·20 claims
- 2755US8971014B2Protection structure for metal-oxide-metal capacitorHUA WEI-CHUN·Filed 2011·Granted Mar 3, 2015·1 cites·20 claims
- 2854US9818866B2Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·0 cites·18 claims
- 2951US10068836B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 4, 2018·0 cites·20 claims
- 3050US9431251B2Semiconductor device having a double deep well and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·0 cites·20 claims
- 3150US6190982B1Method of fabricating a MOS transistor on a semiconductor waferUNITED MICROELECTRONICS CORP·Filed 2000·Granted Feb 20, 2001·4 cites·14 claims
- 3249US7271428B2Heterojunction bipolar transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted Sep 18, 2007·3 cites·3 claims
- 3348US7049240B2Formation method of SiGe HBTUNITED MICROELECTRONICS CORP·Filed 2003·Granted May 23, 2006·6 cites·21 claims
- 3447US7367113B2Method for fabricating a transformer integrated with a semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2006·Granted May 6, 2008·0 cites·10 claims
- 3545US10102972B2Method of forming capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·0 cites·20 claims
- 3645US9620421B2Metal gate transistor, integrated circuits, systems, and fabrication methods thereofHO CHIEN-CHIH·Filed 2010·Granted Apr 11, 2017·0 cites·21 claims
- 3745US7167072B2Method of fabricating inductor and structure formed therefromUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jan 23, 2007·4 cites·23 claims
- 3842US6881640B2Fabrication method for heterojunction bipolar transistorUNITED MICROELECTRONICS CORP·Filed 2003·Granted Apr 19, 2005·1 cites·16 claims
- 3942US2008029854A1Conductive shielding pattern and semiconductor structure with inductor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 4041US7705428B2VaractorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 27, 2010·0 cites·12 claims
- 4140US9583564B2Isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 28, 2017·0 cites·21 claims
- 4239US6063660AFabricating method of stacked type capacitorUNITED MICROELECTRONICS CORP·Filed 1998·Granted May 16, 2000·5 cites·12 claims
- 4338US2007181973A1Capacitor structureHUNG CHENG-CHOU·Filed 2006·Application pending·0 cites
- 4438US2004005763A1Method of manufacturing low-leakage, high-performance deviceUNITED MICROELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 4538US2007210402A1VaractorCHEN YU-CHIA·Filed 2006·Application pending·0 cites
- 4637US6174776B1Method for forming gate contact in complementary metal oxide semiconductorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 16, 2001·6 cites·10 claims
- 4737US2003197225A1Structure and fabrication method of electrostatic discharge protection circuitFiled 2002·Application pending·0 cites
- 4836US2002137293A1Method for forming self-aligned local-halo metal-oxide-semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2002·Application pending·0 cites
- 4936US2002068415A1Method of fabricating a shallow trench isolation structureFiled 2000·Application pending·0 cites
- 5036US2002137299A1Method for reducing the gate induced drain leakage currentFiled 2001·Application pending·0 cites
Showing the top 50 of 57 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →