Inventor · disambiguated record
Kumar R. Virwani
Also filed as: VIRWANI KUMAR · VIRWANI KUMAR R
16 granted patents·6 pending applications·51 citations·filing 2005–2022
90Inventor score
Top patents by PatentIndex Score
22 records- 0194US9243107B2Methods of preparing polyhemiaminals and polyhexahydrotriazinesIBM·Filed 2013·Granted Jan 26, 2016·16 cites·8 claims
- 0288US12284922B2Stacked access device and resistive memoryIBM·Filed 2022·Granted Apr 22, 2025·1 cites·8 claims
- 0388US9773978B1Optimal device structures for back-end-of-line compatible mixed ionic electronic conductors materialsIBM·Filed 2016·Granted Sep 26, 2017·8 cites·19 claims
- 0488US9589635B2Semiconductor device with a stoichiometric gradientIBM·Filed 2014·Granted Mar 7, 2017·6 cites·20 claims
- 0583US8830725B2Low temperature BEOL compatible diode having high voltage margins for use in large arrays of electronic componentsBETHUNE DONALD S·Filed 2011·Granted Sep 9, 2014·10 cites·30 claims
- 0682US9766170B2Determination of young'S modulus of porous thin films using ultra-low load nano-indentationIBM·Filed 2015·Granted Sep 19, 2017·3 cites·19 claims
- 0773US7979916B2Preamplifying cantilever and applications thereofPITTENGER BEDE·Filed 2009·Granted Jul 12, 2011·7 cites·44 claims
- 0861US9951184B2Methods of preparing polyhemiaminals and polyhexahydrotriazinesIBM·Filed 2015·Granted Apr 24, 2018·0 cites·35 claims
- 0957US9705079B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jul 11, 2017·0 cites·1 claims
- 1056US9680096B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Jun 13, 2017·0 cites·1 claims
- 1155US9508930B2Tunable voltage margin access diodesIBM·Filed 2016·Granted Nov 29, 2016·0 cites·1 claims
- 1254US11289650B2Stacked access device and resistive memoryIBM·Filed 2019·Granted Mar 29, 2022·0 cites·6 claims
- 1354US10903270B2Access device and phase change memory combination structure in backend of line (BEOL)IBM·Filed 2018·Granted Jan 26, 2021·0 cites·9 claims
- 1453US9647210B2Tunable voltage margin access diodesIBM·Filed 2015·Granted May 9, 2017·0 cites·17 claims
- 1551US2023371408A1Optimized phase change memory structure to improve nucleation time variationINTEL CORP·Filed 2022·Application pending·0 cites
- 1649US2019115392A1Access device and phase change memory combination structure in backend of line (beol)IBM·Filed 2017·Application pending·0 cites
- 1747US11273357B2Interactive exercise experienceIBM·Filed 2018·Granted Mar 15, 2022·0 cites·20 claims
- 1843US2014087089A1Methods for hardening amorphous dielectric films in a magnetic head and other structuresIBM·Filed 2012·Application pending·0 cites
- 1939US9773513B2Hardening chromium oxide films in a magnetic tape head and other structuresIBM·Filed 2015·Granted Sep 26, 2017·0 cites·9 claims
- 2037US2021305318A1Memory device with improved phase change material nucleation rateINTEL CORP·Filed 2020·Application pending·0 cites
- 2136US2008257867A1Apparatus and Method for Nano-Scale Electric Discharge MachiningMALSHE AJAY P·Filed 2005·Application pending·0 cites
- 2235US2018040819A1Subtractive patterning of back end of line compatible mixed ionic electronic conductor materialsIBM·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →